Modeling of Si self-diffusion in SiO2: Effect of the Si/SiO2 interface including time-dependent diffusivity

Applied Physics Letters

Volumn 84, Issue 6, 2004, Pages 876-878

  Uematsu, Masashi ^a   Kageshima, Hiroyuki ^a   Takahashi, Yasuo ^a   Fukatsu, Shigeto ^b   Itoh, Kohei M ^b   Shiraishi, Kenji ^c   Gösele, Ulrich ^d,e  

^a Kashino Diverse Brain Research Laboratory of NTT Communication Science Laboratories   (Japan)

^b KEIO UNIVERSITY   (Japan)

^c UNIVERSITY OF TSUKUBA   (Japan)

^d HARVARD UNIVERSITY   (United States)

^e MAX PLANCK INSTITUTE   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; COMPOSITION EFFECTS; COMPUTER SIMULATION; DIFFUSION; GROWTH (MATERIALS); INTERFACES (MATERIALS); ION IMPLANTATION; MATHEMATICAL MODELS; SILICON;

SELF DIFFUSION; TIME DEPENDENT DIFFUSIVITY;

SILICA;

EID: 1542315180     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1644623     Document Type: Article

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