Electronic properties of SiC surfaces and interfaces: Some fundamental and technological aspects

Applied Physics A: Materials Science and Processing

Volumn 85, Issue 4, 2006, Pages 371-385

  Seyller, T ^a  

^a UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; CRYSTAL GROWTH; ELECTRONIC PROPERTIES; INTERFACES (MATERIALS); SEMICONDUCTOR MATERIALS; SURFACE PROPERTIES;

BAND GAP; ELECTRON CORRELATION EFFECTS; SWITCHING FREQUENCIES; THERMAL HYDROGENATION;

SILICON CARBIDE;

EID: 33750160354     PISSN: 09478396     EISSN: 14320630     Source Type: Journal    
DOI: 10.1007/s00339-006-3690-1     Document Type: Article

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