Enhanced channel mobility of 4H-SiC metal-oxide-semiconductor transistors fabricated with standard polycrystalline silicon technology and gate-oxide nitridation

Applied Physics Letters

Volumn 80, Issue 22, 2002, Pages 4253-4255

  Schörner, Reinhold ^a   Friedrichs, Peter ^a   Peters, Dethard ^a   Stephani, Dietrich ^a   Dimitrijev, Sima ^b   Jamet, Philippe ^b  

^a SiCED Electronics Development GmbH and Co KG   (Germany)

^b GRIFFITH UNIVERSITY   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

BREAKDOWN FIELD; CHANNEL MOBILITY; ENHANCEMENT MODES; GATE OXIDE; INTERFACE STATE DENSITY; LOW FIELD MOBILITY; METAL-OXIDE; METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR; METAL-OXIDE-SEMICONDUCTOR TRANSISTOR; MOSFETS; N-CHANNEL; POLY-CRYSTALLINE SILICON; POLYCRYSTALLINE SILICON GATES; SEMICONDUCTOR STRUCTURE; SOURCE AND DRAINS; SUBTHRESHOLD SLOPE;

DIELECTRIC DEVICES; MOS DEVICES; MOSFET DEVICES; NITRIC OXIDE; POLYSILICON; SEMICONDUCTING SILICON; SILICON CARBIDE; TRANSISTORS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 79957959962     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1483125     Document Type: Article

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