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Applied Surface Science

Volumn 113-114, Issue , 1997, Pages 585-589

Structure and electronic states of ultrathin SiO 2 thermally grown on Si(100) and Si(111) surfaces

(5) Miyazaki, S a Nishimura, H a Fukuda, M a Ley, L b Ristein, J b

a HIROSHIMA UNIVERSITY (Japan)

b UNIVERSITY OF ERLANGEN NUREMBERG (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONIC STRUCTURE; ELECTRONS; GROWTH (MATERIALS); INTERFACES (MATERIALS); OXIDES; PHONONS; SEMICONDUCTING SILICON; SILICA; SPECTROSCOPY; STRESSES; STRUCTURE (COMPOSITION); ULTRATHIN FILMS;

BAND EDGE TAILING; FOURIER TRANSFORM INFRARED ATTENUATED TOTAL REFLECTION SPECTRA; PHOTOELECTRONS;

SURFACES;

EID: 0031547317 PISSN: 01694332 EISSN: None Source Type: Journal
DOI: 10.1016/S0169-4332(96)00805-7 Document Type: Article

Times cited : (197)

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