Epitaxially ideal oxide-semiconductor interfaces: Silicate adlayers on hexagonal (0001) and (0001̄) SiC surfaces

Applied Physics Letters

Volumn 74, Issue 8, 1999, Pages 1084-1086

  Bernhardt, J ^a   Schardt, J ^a   Starke, U ^a   Heinz, K ^a  

^a UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; INTERFACES (MATERIALS); LOW ENERGY ELECTRON DIFFRACTION; MOLECULAR STRUCTURE; MONOLAYERS; PLASMA ETCHING; SILICA; SILICON CARBIDE; SUBSTRATES;

HYDROGEN PLASMA; SEMICONDUCTOR INTERFACES;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0033593744     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.123489     Document Type: Article

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