Electronic states of an ordered oxide on C-terminated 6H-SiC

Surface Science

Volumn 442, Issue 3, 1999, Pages 531-542

  Hollering, M ^a   Maier, F ^a   Sieber, N ^a   Stammler, M ^a   Ristein, J ^a   Ley, L ^a   Stampfl, A P J ^b,d   Riley, J D ^b   Leckey, R C G ^b   Leisenberger, P P ^c   Netzer, F P ^c  

^a UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

^b LA TROBE UNIVERSITY   (Australia)

^c UNIVERSITY OF GRAZ   (Austria)

^d ARGONNE NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CHEMICAL BONDS; ELECTRONIC STRUCTURE; GROUND STATE; MONOLAYERS; ORDER DISORDER TRANSITIONS; SINGLE CRYSTALS; STOICHIOMETRY; X RAY PHOTOELECTRON SPECTROSCOPY;

MOTT-HUBBARD GROUND STATE; VALENCE BAND MAXIMUM (VBM);

SILICON CARBIDE;

EID: 0033334964     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(99)00998-X     Document Type: Article

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