Studies of oxidized hexagonal SiC surfaces and the SiC/SiO2 interface using photoemission and synchrotron radiation

Journal of Physics Condensed Matter

Volumn 16, Issue 17, 2004, Pages

  Virojanadara, C ^a   Johansson, L I ^a  

^a LINKÖPING UNIVERSITY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; BYPRODUCTS; CHEMICAL BONDS; CRYSTAL DEFECTS; ELECTRON EMISSION; ELECTRON TRANSITIONS; INTERFACES (MATERIALS); MOS DEVICES; OXIDATION; PHOTOEMISSION; PHOTONS; POSITIVE IONS; SILICA; SYNCHROTRON RADIATION; THERMAL CONDUCTIVITY;

AUGER TRANSITIONS; CHEMICAL SHIFTS; OXIDATION STATES; PHOTON ENERGY;

SILICON CARBIDE;

EID: 2442587710     PISSN: 09538984     EISSN: None     Source Type: Journal    
DOI: 10.1088/0953-8984/16/17/017     Document Type: Review

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