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Volumn 52, Issue C, 1998, Pages 195-236

Chapter 5 SiC for Applications in High-Power Electronics

Author keywords

[No Author keywords available]

Indexed keywords

SILICON CARBIDE;

EID: 77956676768     PISSN: 00808784     EISSN: None     Source Type: Book Series    
DOI: 10.1016/S0080-8784(08)62847-1     Document Type: Article
Times cited : (14)

References (86)
  • 5
    • 0343521887 scopus 로고
    • Research Activity on High Temperature Electronics and Its Future Application in Space Exploration in Japan
    • HiTEC, Charlotte, NC, Session I pp, June 5-10
    • M. Tajima. "Research Activity on High Temperature Electronics and Its Future Application in Space Exploration in Japan," Trans. of 2nd International High Temperature Electronics Conference (HiTEC), Charlotte, NC, Session I pp. 29-34, June 5-10, 1994.
    • (1994) Trans. of 2nd International High Temperature Electronics Conference , pp. 29-34
    • Tajima, M.1
  • 6
    • 0024092433 scopus 로고
    • High Temperature Silicon-on-Insulator Electronics for Space Nuclear Power Systems: Requirements and Feasibility
    • Fleetwood D.M. High Temperature Silicon-on-Insulator Electronics for Space Nuclear Power Systems: Requirements and Feasibility. IEEE Trans. Nucl. Sci. NS-35 (1988) 1099-1112
    • (1988) IEEE Trans. Nucl. Sci. , vol.NS-35 , pp. 1099-1112
    • Fleetwood, D.M.1
  • 8
    • 0026154377 scopus 로고
    • The Potential of Diamond and SiC Electronic Devices for Microwave and Millimeter-Wave Power Applications
    • May
    • R.J. Trew, J.B. Yan, P.M. Mock "The Potential of Diamond and SiC Electronic Devices for Microwave and Millimeter-Wave Power Applications," Proceedings of the IEEE, 79 pp. 598-620, May 1991.
    • (1991) Proceedings of the IEEE , vol.79 , pp. 598-620
    • Trew, R.J.1    Yan, J.B.2    Mock, P.M.3
  • 10
    • 77956705291 scopus 로고    scopus 로고
    • Cree Research, Inc., 2810 Meridian Parkway, Durham, NC 27713.
    • Cree Research, Inc., 2810 Meridian Parkway, Durham, NC 27713.
  • 11
    • 77956675422 scopus 로고    scopus 로고
    • Advanced Technology Materials, Inc., 7 Commerce Drive, Danbury, CT 06810-4169.
    • Advanced Technology Materials, Inc., 7 Commerce Drive, Danbury, CT 06810-4169.
  • 12
    • 51249170177 scopus 로고
    • A Microstructural Comparison of the Initial Growth of AlN and GaN Layers on Basal Plane Sapphire and SiC Substrates by Low Pressure Metalorganic Chemical Vapor Deposition
    • George T., Pike W.T., Khan M.A., Kuznia J.N., and Chang-Chien P. A Microstructural Comparison of the Initial Growth of AlN and GaN Layers on Basal Plane Sapphire and SiC Substrates by Low Pressure Metalorganic Chemical Vapor Deposition. J. of Electronic Materials 24 4 (1995) 241-247
    • (1995) J. of Electronic Materials , vol.24 , Issue.4 , pp. 241-247
    • George, T.1    Pike, W.T.2    Khan, M.A.3    Kuznia, J.N.4    Chang-Chien, P.5
  • 17
    • 0028380725 scopus 로고
    • Performance Limiting Micropipe Defects in Silicon Carbide Wafers
    • Neudeck P.G., and Powell J.A. Performance Limiting Micropipe Defects in Silicon Carbide Wafers. IEEE Elect. Dev. Lett. 15 (1994) 63-65
    • (1994) IEEE Elect. Dev. Lett. , vol.15 , pp. 63-65
    • Neudeck, P.G.1    Powell, J.A.2
  • 20
    • 0028462820 scopus 로고
    • Investigation of Deep Levels and Residual Impurities in Sublimation-Grown SiC substrates
    • Udding A., Mitsushashi H., and Uemoto T. Investigation of Deep Levels and Residual Impurities in Sublimation-Grown SiC substrates. Jpn. J. Appl. Phys. 33 (1994) L908-L911
    • (1994) Jpn. J. Appl. Phys. , vol.33
    • Udding, A.1    Mitsushashi, H.2    Uemoto, T.3
  • 21
    • 33847510976 scopus 로고
    • Investigation of Growth Processes of Ingots of Silicon Carbide Single Crystals
    • Tairov Yu.M., and Tsvetkov V.F. Investigation of Growth Processes of Ingots of Silicon Carbide Single Crystals. J. Cryst. Growth 43 (1978) 209-212
    • (1978) J. Cryst. Growth , vol.43 , pp. 209-212
    • Tairov, Yu.M.1    Tsvetkov, V.F.2
  • 22
    • 0348135193 scopus 로고
    • General Principles of Growing Large-Size Single Crystals of Various Silicon Carbide Polytypes
    • Tairov Yu.M., and Tsvetkov V.F. General Principles of Growing Large-Size Single Crystals of Various Silicon Carbide Polytypes. J. Cryst. Growth 52 (1981) 146-150
    • (1981) J. Cryst. Growth , vol.52 , pp. 146-150
    • Tairov, Yu.M.1    Tsvetkov, V.F.2
  • 23
    • 0020112685 scopus 로고
    • Single Crystal Growth of SiC Substrate Material for Blue Light Emitting Diodes
    • Ziegler G., Lanig P., Theis D., and Weyrich C. Single Crystal Growth of SiC Substrate Material for Blue Light Emitting Diodes. IEEE Trans. Elect. Dev. ED-30 (1983) 277-281
    • (1983) IEEE Trans. Elect. Dev. , vol.ED-30 , pp. 277-281
    • Ziegler, G.1    Lanig, P.2    Theis, D.3    Weyrich, C.4
  • 25
    • 77956664275 scopus 로고    scopus 로고
    • R.F. Davis, C.H. Carter, Jr., and C.E. Hunter. U.S. Patent No. 4,866,0005, Sept. 12, 1989.
    • R.F. Davis, C.H. Carter, Jr., and C.E. Hunter. U.S. Patent No. 4,866,0005, Sept. 12, 1989.
  • 26
    • 77956668211 scopus 로고    scopus 로고
    • T. Nakata, K. Koga, Y. Matsushita, Y. Ueda, T. Niina. Proc. of 2nd Int'l. Conf. on Amorphous and Crystalline Silicon Carbide II & Related Mat., Santa Clara, CA, Dec. 15-16, 1988, Springer Proc. Phys. 43: pp. 26-34, 1989.
    • T. Nakata, K. Koga, Y. Matsushita, Y. Ueda, T. Niina. Proc. of 2nd Int'l. Conf. on Amorphous and Crystalline Silicon Carbide II & Related Mat., Santa Clara, CA, Dec. 15-16, 1988, Springer Proc. Phys. 43: pp. 26-34, 1989.
  • 28
    • 0028255371 scopus 로고
    • Sublimation Growth of SiC Single Crystalline Ingots on Faces Perpendicular to the (0001) Basal Plane
    • Takahashi F., Kanaya M., and Fujiwara Y. Sublimation Growth of SiC Single Crystalline Ingots on Faces Perpendicular to the (0001) Basal Plane. J. Cryst. Growth 135 (1994) 61-70
    • (1994) J. Cryst. Growth , vol.135 , pp. 61-70
    • Takahashi, F.1    Kanaya, M.2    Fujiwara, Y.3
  • 29
    • 77956707607 scopus 로고    scopus 로고
    • D. Hofmann S.Y. Karpov Y.N. Makarov E.N. Mokhov M.G. Ramm M.S. Ramm A.D. Roenkov Y.A. Vodakov Use of Ta Container Material for Quality Improvement of SiC Crystals Grown by the Sublimation Technique, Inst. Phys. Conf. Ser. 142 29-32, IOP Publishing, Ltd., Bristol, 1996.
    • D. Hofmann S.Y. Karpov Y.N. Makarov E.N. Mokhov M.G. Ramm M.S. Ramm A.D. Roenkov Y.A. Vodakov "Use of Ta Container Material for Quality Improvement of SiC Crystals Grown by the Sublimation Technique," Inst. Phys. Conf. Ser. 142 29-32, IOP Publishing, Ltd., Bristol, 1996.
  • 31
    • 0031079119 scopus 로고    scopus 로고
    • Electrical Properties of High Resistivity 6H-SiC Under High Temperature/High Field Stress
    • Feb. 10
    • Gradinaru G., Sudarshan T.S., Gradinaru S.A., Mitchell W., and Hobgood H.M. Electrical Properties of High Resistivity 6H-SiC Under High Temperature/High Field Stress. Appl. Phys. Lett. 70 6 (1997) 735-737 Feb. 10
    • (1997) Appl. Phys. Lett. , vol.70 , Issue.6 , pp. 735-737
    • Gradinaru, G.1    Sudarshan, T.S.2    Gradinaru, S.A.3    Mitchell, W.4    Hobgood, H.M.5
  • 32
    • 0042245787 scopus 로고
    • A Process for the Growth of Beta-SiC Substrates.
    • IOP Publishing, Ltd., Bristol
    • Shields V., Fekade K., and Spencer M.G. A Process for the Growth of Beta-SiC Substrates. Inst. Phys. Conf. Ser. 137 (1994) 21-24 IOP Publishing, Ltd., Bristol
    • (1994) Inst. Phys. Conf. Ser. , vol.137 , pp. 21-24
    • Shields, V.1    Fekade, K.2    Spencer, M.G.3
  • 33
    • 77956698123 scopus 로고
    • Single Crystalline Epitaxial Cubic SiC Thin Films Grown on [100] Si at 750°C by Chemical Vapor Deposition
    • presented at the, Fort Monmouth, NJ, April 26-27
    • I. Golecki F. Reidinger J. Marti "Single Crystalline Epitaxial Cubic SiC Thin Films Grown on [100] Si at 750°C by Chemical Vapor Deposition," presented at the Workshop on High Temperature Power Electronics for Vehicles, Fort Monmouth, NJ, April 26-27, 1995.
    • (1995) Workshop on High Temperature Power Electronics for Vehicles
    • Golecki, I.1    Reidinger, F.2    Marti, J.3
  • 34
    • 30244474753 scopus 로고
    • Controlled Thin-Film Growth of Silicon Carbide Polytypes
    • May
    • Anthony Powell J., and Larkin D.J. Controlled Thin-Film Growth of Silicon Carbide Polytypes. NASA Tech. Briefs (1995) 58-59 May
    • (1995) NASA Tech. Briefs , pp. 58-59
    • Anthony Powell, J.1    Larkin, D.J.2
  • 36
    • 0003843819 scopus 로고
    • Site-Competition Epitaxy for Controlled Doping of CVD Silicon Carbide
    • IOP Publishing, Ltd., Bristol
    • Larkin D.J., Neudeck P.G., Powell J.A., and Matus L.G. Site-Competition Epitaxy for Controlled Doping of CVD Silicon Carbide. Inst. Phys. Conf. Ser. 137 (1994) 51-54 IOP Publishing, Ltd., Bristol
    • (1994) Inst. Phys. Conf. Ser. , vol.137 , pp. 51-54
    • Larkin, D.J.1    Neudeck, P.G.2    Powell, J.A.3    Matus, L.G.4
  • 37
    • 0026139037 scopus 로고
    • In Situ Incorporation of Al and N and p-n Junction Diode Fabrication in Alpha (6H)-SiC Thin Films
    • April
    • Wang Y.C., Davis R.F., and Edmond J.A. In Situ Incorporation of Al and N and p-n Junction Diode Fabrication in Alpha (6H)-SiC Thin Films. Journal of Electronic Materials 20 (1991) 289-294 April
    • (1991) Journal of Electronic Materials , vol.20 , pp. 289-294
    • Wang, Y.C.1    Davis, R.F.2    Edmond, J.A.3
  • 38
    • 0042215876 scopus 로고    scopus 로고
    • Site-Competition Epitaxy for n-Type and p-Type Dopant Control in CVD SiC Epilayers.
    • IOP Publishing, Ltd., Bristol
    • Larkin D.J. Site-Competition Epitaxy for n-Type and p-Type Dopant Control in CVD SiC Epilayers. Inst. Phys. Conf. Ser. 142 (1996) 23-28 IOP Publishing, Ltd., Bristol
    • (1996) Inst. Phys. Conf. Ser. , vol.142 , pp. 23-28
    • Larkin, D.J.1
  • 39
    • 51249162981 scopus 로고
    • Hydrogen Incorporation in Boron-Doped 6H-SiC CVD Epilayers Produced Using Site-Competition Epitaxy
    • April
    • Larkin D.J., Sridhara S.G., and Devaty R.P. Hydrogen Incorporation in Boron-Doped 6H-SiC CVD Epilayers Produced Using Site-Competition Epitaxy. J. of Electronic Materials 24 (1995) 289-294 April
    • (1995) J. of Electronic Materials , vol.24 , pp. 289-294
    • Larkin, D.J.1    Sridhara, S.G.2    Devaty, R.P.3
  • 42
    • 0042746986 scopus 로고
    • Two-Dimensional Nucleation and Step Dynamics in Crystal Growth
    • IOP Publishing, Ltd., Bristol
    • Kimoto T., and Matsunami H. Two-Dimensional Nucleation and Step Dynamics in Crystal Growth. Inst. Phys. Conf. Ser. 137 (1994) 55-58 IOP Publishing, Ltd., Bristol
    • (1994) Inst. Phys. Conf. Ser. , vol.137 , pp. 55-58
    • Kimoto, T.1    Matsunami, H.2
  • 43
    • 0022819134 scopus 로고
    • Theoretical and Empirical Studies of Impurity Incorporation into β-SiC Thin Films During Epitaxial Growth
    • Nov.
    • Kim H.J., and Davis R.F. Theoretical and Empirical Studies of Impurity Incorporation into β-SiC Thin Films During Epitaxial Growth. J. Electrochem. Soc. 133 (1986) 2350-2357 Nov.
    • (1986) J. Electrochem. Soc. , vol.133 , pp. 2350-2357
    • Kim, H.J.1    Davis, R.F.2
  • 44
    • 0001054523 scopus 로고
    • Site Effect on the Impurity Levels in 4H, 6H, and 15R SiC
    • Sept. 15
    • Ikeda M., Matsunami H., and Tanaka T. Site Effect on the Impurity Levels in 4H, 6H, and 15R SiC. Phys. Rev. B 22 6 (1980) 2842-2845 Sept. 15
    • (1980) Phys. Rev. B , vol.22 , Issue.6 , pp. 2842-2845
    • Ikeda, M.1    Matsunami, H.2    Tanaka, T.3
  • 46
    • 36449008278 scopus 로고
    • High Quality 4H-SiC Homoepitaxial Layers Grown by Step-Controlled Epitaxy
    • Sept. 12
    • Hoh A., Akita H., Kimoto T., and Matsunami H. High Quality 4H-SiC Homoepitaxial Layers Grown by Step-Controlled Epitaxy. Appl. Phys. Lett. 65 11 (1994) 1400-1402 Sept. 12
    • (1994) Appl. Phys. Lett. , vol.65 , Issue.11 , pp. 1400-1402
    • Hoh, A.1    Akita, H.2    Kimoto, T.3    Matsunami, H.4
  • 47
    • 0009314376 scopus 로고
    • Chemical Vapor Deposition and Characterization of 6H-SiC Thin Films on Off-Axis 6H-SiC Substrates
    • Sept. 1
    • Kong H.S., Glass J.T., and Davis R.F. Chemical Vapor Deposition and Characterization of 6H-SiC Thin Films on Off-Axis 6H-SiC Substrates. J. Appl. Physics 64 5 (1988) 2672-2679 Sept. 1
    • (1988) J. Appl. Physics , vol.64 , Issue.5 , pp. 2672-2679
    • Kong, H.S.1    Glass, J.T.2    Davis, R.F.3
  • 48
    • 0028760315 scopus 로고
    • Deposition and Characterization of Diamond, Silicon Carbide, and Gallium Nitride Thin Films
    • Davis R.F. Deposition and Characterization of Diamond, Silicon Carbide, and Gallium Nitride Thin Films. J. Cryst. Growth 137 (1994) 161-169
    • (1994) J. Cryst. Growth , vol.137 , pp. 161-169
    • Davis, R.F.1
  • 51
    • 0000647591 scopus 로고    scopus 로고
    • Recent Progress in Epitaxial Growth of SiC for Power Device Applications
    • IOP Publishing, Ltd., Bristol
    • Janzen E., and Kordina O. Recent Progress in Epitaxial Growth of SiC for Power Device Applications. Inst. Phys. Conf. Ser. 142 (1996) 653-658 IOP Publishing, Ltd., Bristol
    • (1996) Inst. Phys. Conf. Ser. , vol.142 , pp. 653-658
    • Janzen, E.1    Kordina, O.2
  • 55
    • 77956698709 scopus 로고    scopus 로고
    • J.W. Palmour C.E. Weitzel K.J. Nordquist C.H. Carter, Jr. Inst. Phys. Conf. Ser. 137: p. 495, 19xx.
    • J.W. Palmour C.E. Weitzel K.J. Nordquist C.H. Carter, Jr. Inst. Phys. Conf. Ser. 137: p. 495, 19xx.
  • 63
    • 77956699886 scopus 로고    scopus 로고
    • private communication
    • S.T. Allen private communication.
    • Allen, S.T.1
  • 67
    • 77956657023 scopus 로고    scopus 로고
    • Y. Watanabe J. Nishizawa Japanese patent 205 068, published No. 28-6077, application date, Dec. 1950.
    • Y. Watanabe J. Nishizawa Japanese patent 205 068, published No. 28-6077, application date, Dec. 1950.
  • 71
    • 77956663334 scopus 로고    scopus 로고
    • R.J. Regan A.I. Cogan S.J. Butler I. Bencuya P. Haugsjaa paper presented at 14th European Microwave Conf., Aug. 1984.
    • R.J. Regan A.I. Cogan S.J. Butler I. Bencuya P. Haugsjaa paper presented at 14th European Microwave Conf., Aug. 1984.
  • 77
    • 77956700353 scopus 로고
    • Southwest Semi. Elect. Exp
    • Oct
    • R.J. Regan Proc. Southwest Semi. Elect. Exp., Oct. 1986.
    • (1986)
    • Regan Proc, R.J.1
  • 78
    • 77956654060 scopus 로고    scopus 로고
    • R.J. Regan S.J. Butler E. Bulat A. Varallo M. Abdollahian F. Rock paper presented at the RF Exposition East, Nov. 1986.
    • R.J. Regan S.J. Butler E. Bulat A. Varallo M. Abdollahian F. Rock paper presented at the RF Exposition East, Nov. 1986.
  • 81
    • 77956688124 scopus 로고    scopus 로고
    • J.W. Palmour S.T. Allen R. Singh L.A. Lipkin D.G. Waltz 4H-Silicon Carbide Power Switching Devices, Inst. Phys. Conf. Ser. 142: 813-816, IOP Publishing, Ltd, Bristol, 1996.
    • J.W. Palmour S.T. Allen R. Singh L.A. Lipkin D.G. Waltz "4H-Silicon Carbide Power Switching Devices," Inst. Phys. Conf. Ser. 142: 813-816, IOP Publishing, Ltd, Bristol, 1996.
  • 83


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