Surface state on the SiC(0001)-(√3 × √3) surface

Surface Science

Volumn 360, Issue 1-3, 1996, Pages

  Johansson, L I ^a   Owman, Fredrik ^a   Mårtensson, Per ^a  

^a LINKÖPING UNIVERSITY   (Sweden)

Author keywords

Angle resolved photoemission; Silicon carbide; Single crystal surfaces; Surface electronic phenomena

Indexed keywords

BAND STRUCTURE; CRYSTAL ATOMIC STRUCTURE; CRYSTAL ORIENTATION; FERMI LEVEL; PHOTOEMISSION; SINGLE CRYSTALS; SURFACE PHENOMENA; SURFACE STRUCTURE;

ANGLE RESOLVED PHOTOEMISSION; SURFACE ELECTRONIC PHENOMENA; SURFACE RECONSTRUCTION; SURFACE STATE; VALENCE BAND MAXIMUM;

SILICON CARBIDE;

EID: 0030189681     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/0039-6028(96)00701-7     Document Type: Article

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