Oxidation states present on SiC (0001) after oxygen exposure

Materials Science Forum

Volumn 389-393, Issue 1, 2002, Pages 701-704

  Virojanadara, C ^a   Johansson, L I ^a  

^a LINKÖPING UNIVERSITY   (Sweden)

Author keywords

Intermediate oxidation states; Oxidation; SiC

Indexed keywords

HEATING; INTERFACES (MATERIALS); OXIDATION; OXYGEN; PHOTOEMISSION; SYNCHROTRON RADIATION; REACTION INTERMEDIATES; SILICA; SILICON CARBIDE; SILICON OXIDES;

INTERMEDIATE OXIDATION STATES; OXYGEN EXPOSURE; ROOM TEMPERATURE; CARBON CONTAINING; CORE-LEVEL PHOTOEMISSION; IN-SITU HEATING; OXIDATION STATE; SIO2/SIC INTERFACE;

SILICON CARBIDE; CORE LEVELS;

EID: 2442697992     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.389-393.701     Document Type: Article

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