Si-H bonds on the 6H-SiC(0001) surface after H2 annealing

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 36, Issue 6 A, 1997, Pages

  Tsuchida, Hidekazu ^a   Kamata, Isaho ^a   Izumi, Kunikazu ^a  

^a CENTRAL RESEARCH INSTITUTE OF ELECTRIC POWER INDUSTRY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CHEMICAL BONDS; FOURIER TRANSFORM INFRARED SPECTROSCOPY; HYDROGEN; LIGHT ABSORPTION; MOLECULAR VIBRATIONS; SEMICONDUCTING SILICON;

ATTENUATED TOTAL REFLECTION (ATR) SPECTROSCOPY;

SILICON CARBIDE;

EID: 0031166241     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.36.l699     Document Type: Article

References (13)