Characterization of aluminum and titanium oxides deposited on 4H SiC by atomic layer deposition technique

Materials Science Forum

Volumn 483-485, Issue , 2005, Pages 701-704

  Wolborski, Maciej ^a   Bakowski, Mietek ^a,b   Pore, Viljami ^c   Ritala, Mikko ^c   Leskelä, Markku ^c   Schöner, Adolf ^b   Hallén, Anders ^a  

^a ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

^b ACREO AB   (Sweden)

^c UNIVERSITY OF HELSINKI   (Finland)

Author keywords

4H SiC; ALD; Aluminum oxide; Atomic layer deposition; Passivation; Titanium oxide

Indexed keywords

ALUMINUM COMPOUNDS; ATOMIC LAYER DEPOSITION; DOPING (ADDITIVES); PASSIVATION; SUBSTRATES; TITANIUM OXIDES;

ALUMINUM OXIDE; CAPACITANCE-VOLTAGE DATA; MAXIMUM ELECTRIC FIELDS;

SILICON CARBIDE;

EID: 33144488398     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/0-87849-963-6.701     Document Type: Conference Paper

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