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Volumn 505, Issue , 2002, Pages 234-242

Initial oxidation of 6H-SiC(0 0 0 1)-√3 × √3 surface studied by ion scattering combined with photoemission induced by synchrotron-radiation-light

(6) Hoshino, Y a Nishimura, T a Yoneda, T b Ogawa, K a Namba, H a Kido, Y a

a RITSUMEIKAN UNIVERSITY (Japan)

b FUKUI NATIONAL COLLEGE OF TECHNOLOGY (Japan)

Author keywords

Medium energy ion scattering (MEIS); Oxidation; Silicon carbide; Single crystal surfaces; Synchrotron radiation photoelectron spectroscopy

Indexed keywords

CHEMICAL BONDS; GAS ADSORPTION; OXIDATION; PHOTOELECTRON SPECTROSCOPY; PHOTOEMISSION; SCATTERING; SILICON CARBIDE; SINGLE CRYSTALS; SYNCHROTRON RADIATION;

MEDIUM ENERGY ION SCATTERING (MEIS);

SURFACE CHEMISTRY;

EID: 0036570334 PISSN: 00396028 EISSN: None Source Type: Journal
DOI: 10.1016/S0039-6028(02)01296-7 Document Type: Article

Times cited : (33)

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