Electronic structure of the 6H-SiC(0001)-3 × 3 surface studied with angle-resolved inverse and direct photoemission

Surface Science

Volumn 445, Issue 1, 2000, Pages 109-114

  Johansson, L S O ^a,b   Duda, L ^a   Laurenzis, M ^a   Krieftewirth, M ^a   Reihl, B ^a  

^a TU DORTMUND UNIVERSITY   (Germany)

^b KARLSTAD UNIVERSITY   (Sweden)

Author keywords

Angle resolved photoemission; Inverse photoemission spectroscopy; Low index single crystal surfaces; Silicon carbide; Surface electronic phenomena (work function, surface potential, surface states, etc.)

Indexed keywords

ELECTRONIC STRUCTURE; EMISSION SPECTROSCOPY; ENERGY GAP; GROUND STATE; LOW ENERGY ELECTRON DIFFRACTION; PHOTOEMISSION; SEMICONDUCTING SILICON COMPOUNDS; SINGLE CRYSTALS; SURFACE PHENOMENA; SURFACE STRUCTURE;

ANGLE RESOLVED PHOTOEMISSION; LOW INDEX SINGLE CRYSTAL; MOTT-HUBBARD GROUND STATE;

SILICON CARBIDE;

EID: 0033887532     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(99)01054-7     Document Type: Article

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