Initial stages of thermal oxidation of 4H-SiC(112̄0) studied by photoelectron spectroscopy

Materials Science Forum

Volumn 457-460, Issue II, 2004, Pages 1317-1320

  Seyller, Th ^a   Emtsev, K V ^a   Graupner, R ^a   Ley, L ^a  

^a UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

Author keywords

A planes; Gate dielectric; Oxidation; Photoelectron spectroscopy

Indexed keywords

CARBON; ENERGY GAP; MATHEMATICAL MODELS; MOSFET DEVICES; OXIDATION; PHOTOELECTRON SPECTROSCOPY; PYROMETERS;

A-PLANES; GATE DIELECTRICS; INFRARED PYROMETERS; PHOTON ENERGY;

SILICON CARBIDE;

EID: 8744278194     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.457-460.1317     Document Type: Conference Paper

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