SCOPUS 정보 검색 플랫폼

Journal of Electronic Materials

Volumn 29, Issue 8, 2000, Pages 1027-1032

Effect of NO annealing conditions on electrical characteristics of n-type 4H-SiC MOS capacitors

(4) Li, H F a Dimitrijev, S a Sweatman, D a Harrison, H B a

a GRIFFITH UNIVERSITY (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ELECTRIC CONDUCTANCE; HIGH TEMPERATURE EFFECTS; INTERFACES (MATERIALS); MOS CAPACITORS; NITROGEN OXIDES; SEMICONDUCTING SILICON COMPOUNDS; SILICA;

EFFECTIVE OXIDE CHARGE;

SILICON CARBIDE;

EID: 0034248219 PISSN: 03615235 EISSN: None Source Type: Journal
DOI: 10.1007/s11664-000-0168-3 Document Type: Article

Times cited : (29)

References (16)

1
- 0026154377
- R.J. Trew, J.B. Yan, and P.M. Mock, Proc. IEEE 79, 598 (1991).
- (1991) Proc. IEEE , vol.79 , pp. 598
- Trew, R.J.¹ Yan, J.B.² Mock, P.M.³

2
- 51249162328
- J.N. Shenoy, G.L. Chindalore, M.R. Melloch, J.A. Cooper, Jr., J.W. Palmour, and K.G. Irvine, J. Electron. Mater. 24, 303 (1995).
- (1995) J. Electron. Mater. , vol.24 , pp. 303
- Shenoy, J.N.¹ Chindalore, G.L.² Melloch, M.R.³ Cooper J.A., Jr.⁴ Palmour, J.W.⁵ Irvine, K.G.⁶

3
- 5544260830
- R. Friedrichs, E.P. Burte, and R. Schorner, J. Appl. Phys. 79, 7814 (1996).
- (1996) J. Appl. Phys. , vol.79 , pp. 7814
- Friedrichs, R.¹ Burte, E.P.² Schorner, R.³

4
- 36449004431
- D. Alok, P.K. McLarty, and B.J. Baliga, Appl. Phys. Lett. 64, 2845 (1994).
- (1994) Appl. Phys. Lett. , vol.64 , pp. 2845
- Alok, D.¹ McLarty, P.K.² Baliga, B.J.³

5
- 0037696905
- C. Raynaud, J.-L. Autran, B. Balland, G. Guillot, C. Jaussaud, and T. Billon, J. Appl. Phys. 76, 993 (1994).
- (1994) J. Appl. Phys. , vol.76 , pp. 993
- Raynaud, C.¹ Autran, J.-L.² Balland, B.³ Guillot, G.⁴ Jaussaud, C.⁵ Billon, T.⁶

6
- 0028731053
- B. Hornetz, H.-J. Michel, and J. Halbritter, J. Mater. Res. 9, 3088 (1994).
- (1994) J. Mater. Res. , vol.9 , pp. 3088
- Hornetz, B.¹ Michel, H.-J.² Halbritter, J.³

7
- 0000535314
- C. Onneby and C.G. Pantano, J. Vac. Sci. Technol. A 15, 1597 (1997).
- (1997) J. Vac. Sci. Technol. A , vol.15 , pp. 1597
- Onneby, C.¹ Pantano, C.G.²

8
- 0029359849
- Z.-Q. Yao, H.B. Harrison, S. Dimitrijev, and Y.T. Yeow, IEEE Electron Device Lett. 16, 345 (1995).
- (1995) IEEE Electron Device Lett. , vol.16 , pp. 345
- Yao, Z.-Q.¹ Harrison, H.B.² Dimitrijev, S.³ Yeow, Y.T.⁴

9
- 0026819955
- J. Ann, W. Ting, and D.-L. Kwong, IEEE Electron Device Lett. 13, 117 (1992).
- (1992) IEEE Electron Device Lett. , vol.13 , pp. 117
- Ann, J.¹ Ting, W.² Kwong, D.-L.³

10
- 0001441489
- H.-F. Li, S. Dimitrijev, H.B. Harrison, and D. Sweatman, Appl. Phys. Lett. 70, 2028 (1997).
- (1997) Appl. Phys. Lett. , vol.70 , pp. 2028
- Li, H.-F.¹ Dimitrijev, S.² Harrison, H.B.³ Sweatman, D.⁴

11
- 0031146794
- S. Dimitrijev, H.-F. Li, H.B. Harrison, and D. Sweatman, IEEE Electron Lett. 18, 175 (1997).
- (1997) IEEE Electron Lett. , vol.18 , pp. 175
- Dimitrijev, S.¹ Li, H.-F.² Harrison, H.B.³ Sweatman, D.⁴

12
- 0032139445
- H.-F. Li, S. Dimitrijev, and H.B. Harrison, IEEE Electron Device Lett. 19, 279 (1998).
- (1998) IEEE Electron Device Lett. , vol.19 , pp. 279
- Li, H.-F.¹ Dimitrijev, S.² Harrison, H.B.³

13
- 0000448572
- H.-F. Li, S. Dimitrijev, D. Sweatman, H.B. Harrison, P. Tanner, and B. Feil, J. Appl. Phys. 86, 4316 (1999).
- (1999) J. Appl. Phys. , vol.86 , pp. 4316
- Li, H.-F.¹ Dimitrijev, S.² Sweatman, D.³ Harrison, H.B.⁴ Tanner, P.⁵ Feil, B.⁶

14
- 0004071496
- New York: John Wiley & Sons, Inc.
- D.K. Schroder, Semicond. Mater. and Device Charact. (New York: John Wiley & Sons, Inc., 1990).
- (1990) Semicond. Mater. and Device Charact.
- Schroder, D.K.¹

15
- 0031189326
- J.A. Copper, Jr., Phys. Stat. Sol.(a) 162, 305 (1997).
- (1997) Phys. Stat. Sol.(a) , vol.162 , pp. 305
- Copper J.A., Jr.¹

16
- 0029193944
- C. Raynaud, J.-I. Autran, J.-B. Briot, and B. Balland, J. Electrochem. Soc. 142, 282 (1995).
- (1995) J. Electrochem. Soc. , vol.142 , pp. 282
- Raynaud, C.¹ Autran, J.-I.² Briot, J.-B.³ Balland, B.⁴

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.