Low resistance ohmic contact to n-GaN with a separate layer method

Solid-State Electronics

Volumn 41, Issue 2 SPEC. ISS., 1997, Pages 165-168

  Wu, Y F ^a   Jiang, W N ^a   Keller, B P ^a   Keller, S ^a   Kapolnek, D ^a   Denbaars, S P ^a   Mishra, U K ^a   Wilson, B ^b  

^a University of California   (United States)

^b Hughes Aircraft Co   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; DEPOSITION; ELECTRIC RESISTANCE; GOLD; NITRIDES; OHMIC CONTACTS; TITANIUM COMPOUNDS;

OHMIC METALLIZATION METHOD; TITANIUM NITRIDE (TIN) FORMATION;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0031078188     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0038-1101(96)00151-7     Document Type: Article

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