High-speed pin ultraviolet photodetectors fabricated on GaN

Electronics Letters

Volumn 34, Issue 18, 1998, Pages 1779-1781

  Carrano, J C ^a   Li, T ^a   Brown, D L ^a   Grudowski, P A ^a   Eiting, C J ^a   Dupuis, R D ^a   Campbell, J C ^a  

^a The University of Texas at Austin   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BANDWIDTH; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES;

PIN DEVICE STRUCTURES;

ULTRAVIOLET DETECTORS;

EID: 0032480198     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19981272     Document Type: Article

References (6)

1. XU, G.Y., SALVADOR, A., KIM, W., FAN, Z., LU, C., TANG, H., MORKOC, H., SMITH, G., ESTES, M., GOLDENBURG, B., YANG, W., and KRISHNANKUTTY, S.: 'High-speed, low noise ultraviolet photodetectors based on GaN p-i-n and AlGaN(p)-GaN(i)-GaN(n) structures', Appl. Phys. Lett., 1997, 71, pp. 2154-2156
2. OSINSKY, A., GANGOPADHYAY, S., GASKA, R., WILLIAMS, B., KHAN, M.A., KULSENKOV, D., and TEMKIN, H.: 'Low noise p-π-p GaN ultraviolet photodetectors', Appl. Phys. Lett., 1997, 71, pp. 2334-2336
3. CARRANO, J.C., LING, T., GRUDOWSKI, P.A., EITING, C.J., LAMBERT, D., SCHAUB, J.D., DUPUIS, R.D., and CAMPBELL, J.C.: 'Low dark current p-i-n ultraviolet photodetectors fabricated on GaN grown by metal organic chemical vapour deposition', Electron. Lett., 1998, 34, pp. 692-693
4. 1-xN photodetector working at 360 nm: Design and analysis', submitted to Opt. Lett., 1998
5. OGUZMAN, I.H., KOLNIK, J., BRENNAN, K.F., WANG, R., and RUDEN, P.P.: 'Monte Carlo calculation of hole transport in bulk zincblende phase of GaN including a pseudopotential calculated band structure'. Mat. Res. Soc. Symp. Proc., 1996, Vol. 395, pp. 479-484
6. ALBRECHT, J.D., WANG, R.P., RUDEN, P.P., FARAHMAND, M., and BRENNAN, K.F.: 'Electron transport characteristics of GaN for high temperature device modeling', J. Appl. Phys., 1998, 83, pp. 4777-4781