Development of gallium nitride photoconductive detectors

Johns Hopkins APL Technical Digest (Applied Physics Laboratory)

Volumn 18, Issue 2, 1997, Pages 217-224

  Wickenden, Dennis K ^a,b,c,d,e,f   Huang, Zhenchun ^g,h,i,j   Mott, D Brent ^g,k,l,m,n   Shu, Peter K ^m  

^a APL   (United States)

^b IMPERIAL COLLEGE LONDON   (United Kingdom)

^c USA   (United States)

^d UNIVERSITY OF NOTRE DAME   (United States)

^e Hirst Research Centre   (United Kingdom)

^f Crystal Specialties   (United States)

^g NASA GODDARD SPACE FLIGHT CENTER   (United States)

^h NANJING UNIVERSITY   (China)

ⁱ UNIVERSITY AT BUFFALO   (United States)

^j UNIVERSITY OF MARYLAND BALTIMORE COUNTY   (United States)

^k UNIVERSITY OF MARYLAND   (United States)

^l Goddard's Infrared Astrophys Branch   (United States)

^m Device Development Group ^*

ⁿ Device Development Group   (United States)

more..

Author keywords

Detector; Gallium nitride; Photoconductor; Ultraviolet

Indexed keywords

EID: 0000903807     PISSN: 02705214     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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