Effect of device temperature on RF FET power density

Materials Science Forum

Volumn 264-268, Issue PART 2, 1998, Pages 969-972

  Weitzel, C ^a   Pond, L ^a   Moore, K ^a   Bhatnagar, M ^a  

^a MOTOROLA INC   (United States)

Author keywords

Field Effect Transistors; Gallium Arsenide; HFET; High Power High Frequency; MESFET; RF Power; Silicon; Simulation Modeling; Thermal Conductivity

Indexed keywords

CURRENT DENSITY; HETEROJUNCTIONS; MESFET DEVICES; SAPPHIRE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE MODELS; SILICON CARBIDE; SILICON WAFERS; THERMAL CONDUCTIVITY OF SOLIDS; THERMAL EFFECTS;

HETEROJUNCTION FIELD EFFECT TRANSISTORS (HFET); POWER DENSITY;

POWER ELECTRONICS;

EID: 11644282316     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.264-268.969     Document Type: Article

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