Very low dark current metal-semiconductor-metal ultraviolet photodetectors fabricated on single-crystal GaN epitaxial layers

Applied Physics Letters

Volumn 70, Issue 15, 1997, Pages 1992-1994

  Carrano, J C ^a   Grudowski, P A ^a   Eiting, C J ^a   Dupuis, R D ^a   Campbell, J C ^a  

^a The University of Texas at Austin   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CALCULATIONS; COMPUTER SIMULATION; CURRENT DENSITY; ELECTRIC CURRENT MEASUREMENT; ELECTRIC CURRENTS; FABRICATION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTOCONDUCTIVITY; SEMICONDUCTING GALLIUM COMPOUNDS; ULTRAVIOLET RADIATION;

DARK CURRENT; GALLIUM NITRIDE; MEDICI SIMULATION;

ULTRAVIOLET DETECTORS;

EID: 0031123017     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.118777     Document Type: Article

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