Effect of nitrogen and argon anneals on the leakage current of SIMOX TFSOI devices

IEEE International SOI Conference

Volumn , Issue , 1995, Pages 44-45

  Shin, Hank ^a   Wetteroth, Tom ^a   Wilson, Syd R ^a   Harris, Gari ^a   Schroder, Dieter ^a   Krull, Wade ^a   Alles, Mike ^a  

^a MOTOROLA INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ARGON; CURRENT VOLTAGE CHARACTERISTICS; ELECTRONS; HIGH TEMPERATURE PROPERTIES; INERT GASES; LEAKAGE CURRENTS; MOS DEVICES; NITROGEN; SECONDARY ION MASS SPECTROMETRY; SILICON NITRIDE; THIN FILM DEVICES;

CHEMICAL MEASUREMENTS; HIGH TEMPERATURE ANNEALING TREATMENT; NEAR FULLY DEPLETED DEVICES; NITROGEN TRAPPING;

SILICON ON INSULATOR TECHNOLOGY;

EID: 0029503521     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (2)