Effect of bias on thermally stimulated current (TSC) in irradiated MOS devices

IEEE Transactions on Nuclear Science

Volumn 38, Issue 6, 1991, Pages 1066-1077

  Reber, R A ^b   Winokur, P S ^a  

^a SANDIA NATIONAL LABORATORIES   (United States)

^b Diversus Incorporated ^*  (Mexico)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITORS; ELECTRIC FIELD EFFECTS;

THERMAL STIMULATED CURRENTS; TRAPPED HOLES;

SEMICONDUCTOR DEVICES, MOS;

EID: 0026396455     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/23.124076     Document Type: Article

References (35)

1. J. G. Simmons, G. Taylor, and M. Tam, “Thermally Stimulated Currents in Semiconductors and Insulators Having Arbitrary Trap Distributions,” Phys. Rev. B 7, 3714 (1973); J. G. Simmons and G. W. Taylor, “High-Field Isothermal Currents and Thermally Stimulated Currents in Insulators Having Discrete Trapping Levels,” B5, 1619 (1972).
2. Z. Shanfield and M. M. Moriwaki, “Radiation-Induced Hole Trapping and Interface State Characteristics of Al-Gate and Poly-Si Si Gate MOS Capacitors,” IEEE Trans. Nucl. Sci. NS-32, 3929 (1985); “Characteristics of Hole Traps in Dry and Pyrogenic Gate Oxides,” NS-31, 1242 (1984); Z. Shanfield, “Thermally Stimulated Current Measurements of Irradiated MOS Capacitors,” NS-30, 4064 (1983); G. A. Brown, Z. Shanfield, A. G. Revesz, M. M. Moriwaki, and H. L. Hughes, “Effects of Post-Oxidation Annealing on the Radiation Response of MOS Capacitors,” J. Rad. Effects, Res. & Eng. 7, No. 1, 31 (1989).
3. Z. Shanfield and M. M. Moriwaki, “Critical Evaluation of the Midgap-Voltage-Shift Method for Determining Oxide Trapped Charge in Irradiated MOS Devices,” IEEE Trans. Nucl. Sci. NS-34, 1159 (1987).
4. Z. Shanfield, G. A. Brown, A. G. Revesz, and H. L. Hughes, “A New MOS Radiation-Induced Charge: Negative Fixed Interface Charge,” J. Rad. Effects, Res. & Eng. 8, No. 2, 1 (1990).
5. G. A. Scoggan and T. P. Ma, “Effects of Electron-Beam Irradiation on MOS Structures as Influenced by the Silicon Dopant,” J. Appl. Phys. 48, 294 (1977).
6. P. S. Winokur, J. R. Schwank, P. J. McWhorter, P. V. Dressendorfer, and D. C. Turpin, “Correlating the Radiation Response of MOS Capacitors and Transistors,” IEEE Trans. Nucl. Sci. NS-31, 1453 (1984).
7. R. J. Powell and G. F. Derbenwick, “Vacuum Ultraviolet Radiation Effects in SiO2,” IEEE Trans. Nucl. Sci. NS-18, 99 (1971).
8. P. M. Lenahan and P. V. Dressendorfer, “Hole Traps and Trivalent Silicon Centers in MOS Devices,” J. Appl. Phys. 55, 3495 (1984); Y. Y. Kim and P. M. Lenahan, “Electron-Spin-Resonance Study of Radiation-Induced Paramagnetic Defects in Oxides Grown on (100) Silicon Substrates,” 64, 3551 (1988).
9. P. J. McWhorter, P. S. Winokur, and R. A. Pastorek, “Donor/Acceptor Nature of Radiation-Induced Interface Traps,” IEEE Trans. Nucl. Sci. NS-35, 1154 (1988).
10. P. J. McWhorter, D. M. Fleetwood, R. A. Pastorek, and G. T. Zimmerman, “Comparison of MOS Capacitor and Transistor Postirradiation Response,” IEEE Trans. Nucl. Sci. 36, 1792 (1989).
11. J. R. Schwank, P. S. Winokur, P. J. McWhorter, F. W. Sexton, P. V. Dressendorfer, and D. C. Turpin, “Physical Mechanisms Contributing to Device Rebound,” IEEE Trans. Nucl. Sci. NS-31, 1453 (1984).
12. D. M. Fleetwood, M. R. Shaneyfelt, J. R. Schwank, P. S. Winokur, and F. W. Sexton, “Theory and Application of Dual-Transistor Transistor Charge-Separation Analysis,” IEEE Trans. Nucl. Sci. NS-36, 1816 (1989).
13. P. S. Winokur, F. W. Sexton, J. R. Schwank, D. M. Fleetwood, P. V. Dressendorfer, T. F. Wrobel, and D. C. Turpin, “Total-Dose Radiation and Annealing Studies: Implications for Hardness Assurance Testing,” IEEE Trans. Nucl. Sci. NS-33, 1343 (1986).
14. D. M. Fleetwood and R. A. Reber, Jr., to be published.
15. For process details, see D. M. Fleetwood, P. S. Winokur, L. J. Lorence, Jr., W. Beezhold, P. V. Dressendorfer, and J. R. Schwank, “The Response of MOS Devices to Dose-Enhanced Low-Energy Energy Radiation,” IEEE Trans. Nucl. Sci. NS-33, 1245 (1986).
16. J. R. Schwank and D. M. Fleetwood, “Effect of Post-Oxidation Oxidation Anneal Temperature on Radiation-Induced Charge Trapping in MOS Devices,” Appl. Phys. Lett. 53, 770 (1988).
17. J. M. Terrell, T. R. Oldham, A. J. Lelis, and J. M. Benedetto, “Time Dependent Annealing of Radiation-Induced Leakage Currents in MOS Devices,” IEEE Trans. Nucl. Sci. 36, 2205 (1989).
18. P. S. Winokur, E. B. Errett, D. M. Fleetwood, P. V. Dressendorfer, and D. C. Turpin, “Optimizing and Controlling the Radiation Response of a Si-Gate CMOS Process,” IEEE Trans. Nucl. Sci. NS-32, 3954 (1985).
19. For process details, see J. R. Schwank, D. M. Fleetwood, P. S. Winokur, P. V. Dressendorfer, D. C. Turpin, and D. T. Sanders, “The Role of Hydrogen in Radiation-Induced Defect Formation in Polysilicon Gate MOS Devices,” IEEE Trans. Nucl. Sci. NS-34, 1152 (1987).
20. P. J. McWhorter, S. Miller, and W. Miller, “Modeling the Anneal of Radiation-Induced Trapped Holes in a Varying Thermal Environment,” IEEE Trans. Nucl. Sci. NS-37, 1682 (1990).
21. F. B. McLean, H. E. Boesch, Jr., and T. R. Oldham, in Ionizing Radiation Effects in MOS Devices & Circuits, edited by T. P. Ma and P. V. Dressendorfer (Wiley, New York, 1989), pp. 153–156.
22. P. J. McWhorter and T. R. Oldham, private communications.
23. J. M. Aitken, D. R. Young, and K. Pan, “Electron Trapping in Electron-Beam Irradiated SiO2,” J. Appl. Phys. 49, 3386 (1976); A. Reisman, C. K. Williams, and J. R. Maldonado, “Generation and Annealing of Defects in Silicon Dioxide,” 62, 868 (1987); M. Walters and A. Reisman, “The Distribution of Radiation-Induced Charged Defects and Neutral Electron Traps in SiO2, and the Threshold Voltage Shift Dependence on Oxide Thickness,” 67, 2992 (1990).
24. C. M. Dozier, D. B. Brown, J. L. Throckmorton, and D. I. Ma, “Defect Production in SiO2 by X-ray and Co-60 Irradiations,” IEEE Trans. Nucl. Sci. NS-32, 4363 (1985).
25. A. J. Lelis, H. E. Boesch, Jr., T. R. Oldham, and F. B. McLean, “Reversibility of Trapped Hole Annealing,” IEEE Trans. Nucl. Sci. NS-35, 1186 (1988); A. J. Lelis, T. R. Oldham, H. E. Boesch, Jr., and F. B. McLean, “The Nature of the Trapped Hole Annealing Process,” NS-36, 1808 (1989).
26. R. E. Stahlbush, B. J. Mrstik, and R. K. Lawrence, “Post-Irradiation Irradiation Behavior of the Interface State Density and the Trapped Positive Charge,” IEEE Trans. Nucl. Sci. NS-37, 1641 (1990).
27. T. L. Meisenheimer, D. M. Fleetwood, M. R. Shaneyfelt, and L. C. Riewe, “1/f Noise in N-and P-Channel MOS Devices Through Irradiation and Annealing,” IEEE Trans. Nucl. Sci. NS-38, No. 6 (1991).
28. D. M. Fleetwood and J. H. Scofield, “Evidence that Similar Point Defects Cause 1/f Noise and Radiation-Induced-Hole Trapping in MOS Transistors,” Phys. Rev. Lett. 64, 579 (1990).
29. H. Witham and P. M. Lenahan, “The Nature of the Deep Hole Trap in MOS Oxides,” IEEE Trans. Nucl. Sci. NS-34, 1147 (1987).
30. M. A. Jupina and P. M. Lenahan, “A Spin Dependent Recombination Study of Radiation Induced Defects At and Near the Si/SiO2 Interface,” IEEE Trans. Nucl. Sci. NS-36, 1800 (1989).
31. T. R. Oldham, A. J. Lelis, and F. B. McLean, “Spatial Dependence of Trapped Holes Determined from Tunneling Analysis and Measured Annealing,” IEEE Trans. Nucl. Sci. NS-33, 1203 (1986).
32. P. S. Winokur, K. G. Kerris, and L. Harper, “Predicting CMOS Inverter Response in Nuclear and Space Environments,” IEEE Trans. Nucl. Sci. NS-30, 4326 (1983).
33. D. M. Fleetwood, P. S. Winokur, and J. R. Schwank, “Using Laboratory X-ray and Co-60 Irradiations to Predict CMOS Device Response in Strategic and Space Environments,” IEEE Trans. Nucl. Sci. NS-35, 1497 (1988).
34. D. M. Fleetwood, P. S. Winokur, L. C. Riewe, and R. L. Pease, “An Improved Standard Total Dose Test for CMOS Space Electronics,” IEEE Trans. Nucl. Sci. NS-36, 1963 (1989).
35. M. P. Haze, R. E. Plaag, and A. H. Johnston, “A Comparison of Methods for Total Dose Testing of Bulk CMOS and CMOS/SOS Devices,” IEEE Trans. Nucl Sci. NS-37, 1818 (1990).