Use of MOS Structures for the Investigation of Low-Dose-Rate Effects in Bipolar Transistors

IEEE Transactions on Nuclear Science

Volumn 42, Issue 6, 1995, Pages 1660-1666

  Belyakov, V V ^a   Pershenkov, V S ^b   Shalnov, A V ^b   Shvetzov Shilovsky, I N ^b  

^a NATIONAL RESEARCH NUCLEAR UNIVERSITY MEPHI   (Russian Federation)

^b NONE

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; DEGRADATION; MOS DEVICES; RADIATION EFFECTS; SEMICONDUCTOR DEVICE STRUCTURES; THERMAL EFFECTS;

DOSE RATE; IRRADIATION RESPONSE; SURFACE PERIPHERAL RECOMBINATION CURRENT;

BIPOLAR TRANSISTORS;

EID: 0029519299     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/23.488763     Document Type: Article

References (15)

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