Microscopic nature of border traps in MOS oxides

IEEE Transactions on Nuclear Science

Volumn 41, Issue 6, 1994, Pages 1817-1827

  Warren, W L ^a   Shaneyfelt, M R ^a   Fleetwood, D M ^a   Schwank, J R ^a   Winokur, P S ^a   Devine, R A B ^b  

^a SANDIA NATIONAL LABORATORIES   (United States)

^b ORANGE LABS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTAL DEFECTS; CRYSTAL GROWTH; ELECTRON ENERGY LEVELS; ELECTRONIC STRUCTURE; HIGH TEMPERATURE EFFECTS; INTERFACES (MATERIALS); RADIATION EFFECTS; RECRYSTALLIZATION (METALLURGY); SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR INSULATOR BOUNDARIES; SPECTROSCOPIC ANALYSIS;

ELECTRON PARAMAGNETIC RESONANCE; ELECTRON TRAPPING; HOLE TRANSFER; OXYGEN VACANCY TYPE DEFECTS;

MOS DEVICES;

EID: 0028693950     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/23.340513     Document Type: Article

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