Time-Dependent Hole and Electron Trapping Effects in SIMOX Buried Oxides

IEEE Transactions on Nuclear Science

Volumn 37, Issue 6, 1990, Pages 1982-1989

  Boesch, H Edwin ^a   Taylor, Thomas L ^a   Hite, Larry R ^b   Bailey, Wayne E ^b  

^a U S ARMY RESEARCH LABORATORY   (United States)

^b TEXAS INSTRUMENTS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLIZATION; OXYGEN; SEMICONDUCTOR MATERIALS--ION IMPLANTATION;

ELECTRON TRAPPING; HOLE TRAPPING; SEPARATION BY IMPLANTED OXYGEN;

TRANSISTORS, FIELD EFFECT;

EID: 0025597502     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/23.101218     Document Type: Article

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