Charge yield and dose effects in MOS capacitors at 80 K1

IEEE Transactions on Nuclear Science

Volumn 23, Issue 6, 1976, Pages 1520-1525

  Boesch, H E ^a   McGarrity, J M ^a  

^a U S ARMY RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

SILICA - RADIATION EFFECTS;

SEMICONDUCTOR DEVICES, MIS;

EID: 0017216943     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/TNS.1976.4328532     Document Type: Article

References (16)

1. This work was supported by the Defense Nuclear Agency and the US Army Materiel Development and Readiness Command.
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