Hole transport and trapping in field oxides

IEEE Transactions on Nuclear Science

Volumn 32, Issue 6, 1985, Pages 3940-3945

  Boesch, Edwin ^a   McLean, F Barry ^a  

^a U S ARMY RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 84939034542     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/TNS.1985.4334047     Document Type: Article

References (14)

1. H. E. Boesch, Jr., F. B. McLean, J. M. McGarrity, and G. A. Ausman, Jr., “Hole Transport and Charge Relaxation in Irradiated SiO2 MOS Capacitors,” IEEE Trans. Nucl. Sci. NS-22, No. 6, 2163–2167 (Dec. 1975). NS-22.
2. H. H. Sander and B. L. Gregory, “Unified Model of Damage Annealing in CMOS, from Freeze-in to Transient Annealing,” IEEE Trans. Nucl. Sci. NS-22, 22, No. 6, 2157–2162 (Dec. 1975).
3. R. C. Hughes, E. P. EerNisse, and H. J. Stein, “Hole Transport in MOS Oxides,” IEEE Trans. Nucl. Sci. NS-22, No. 6, 2227–2233 (Dec. 1975).
4. F. B. McLean,, G. A. Ausman, Jr., H. E. Boesch, Jr., and J. M. McGarrity, “Application of Stochastic Hopping Transport to Hole Conduction in Amorphous Si09,”, J. Appl. Phys. 47, No. 4, 1529–1532 (April i976).
5. F. B. McLean, H. E. Boesch, Jr., and J. M. McGarrity, “Hole Transport and Recovery Characteristics of SiO2 Gate Insulators,” IEEE Trans. Nucl. Sci. NS-23, No. 6, 1506–1512 (Dec. 1976).
6. F. B. McLean, H. E. Boesch, Jr., and J. M. McGarrity, “Field-Dependent Hole Transport in Amorphous Si0 2,” 19–23, in “The Physics of SiO2 and its Interfaces, Proceedings of the International Topical Conference, Yorktown Heights, NY, March 22–24, 1978,” S. J. Pantelides, editor, Pergamon Press (1978).
7. H. E. Boesch, Jr., F. B. McLean, J. M. McGarrity, and P. S. Winokur, “Enhanced Flatband Voltage Recovery in Hardened Thin MOS Capacitors,” IEEE Trans. Nucl. Sci. NS-25, No. 6, 1239–1245 (Dec. 1978). NS-25.
8. J. R. Schwank, P. S. Winokur, P. J. McWhorter, F. W. Sexton, P. V. Dressendorfer, and D. C. Turpin, “Physical Mechanisms Contributing to Device Rebound,” IEEE Trans. Nucl. Sci. NS-31, No. 6, 1434–1438 (Dec. 1984). NS-31.
9. H. E. Boesch, Jr., “Interface State Generation in Thick SiO Layers,” IEEE Trans. Nucl. Sci. NS-29, No. 6, 1446–1451 (Dec. 1982).
10. H. E. Boesch, Jr., J. M. McGarrity, and F. B. McLean, “Temperature-and Field-Dependent Charge Relaxation in SiO2 Gate Insulators,” IEEE Trans. Nucl. Sci. NS-25, No. 3, 1012–1016 (June 1978).
11. H. E. Boesch, Jr., and T. L. Taylor, “Charge and Interface State Generation in Field Oxides,” IEEE Trans. Nucl. Sci. NS-31, No. 6, 1273–1279 (Dec. 1984). NS-31.
12. J. R. Srour, S. Othmer, 0. L. Curtis, Jr., and K. Y. Chiu, “Radiation-Induced Charge Transport and Charge Buildup in SiO2 Films at Low Temperatures,” IEEE Trans. Nucl. Sci. NS-23, No. 6, 1513–1519 (Dec. 1976). NS-23.
13. C. M. Dozier and D. B. Brown, “Photon Energy Dependence of Radiation Effects in MOS Structures,” IEEE Trans. Nucl. Sci. NS-27, No. 6, 1694–1699 (Dec. 1980). NS-27.
14. R. L. Pease, D. Emily, and H. E. Boesch, Jr., “Total Dose Induced Hole Trapping and Interface State Generation in Bipolar Recessed Field Oxides,” IEEE Trans. Nucl. Sci. NS-32, No. 6 (This Issue), (Dec. 1985). NS-32.