Growth and annealing of trapped holes and interface states using time-dependent biases

IEEE Transactions on Nuclear Science

Volumn 34, Issue 6, 1987, Pages 1172-1177

  Freitag, R K ^a   Dozier, C M ^a   Brown, D B ^a  

^a NAVAL RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0007240288     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/TNS.1987.4337448     Document Type: Article

References (29)

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22. Thanks to one of the reviewers for pointing out this fact to us.
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26. This calculation is based on the following simplifying assumptions: (a) the initial electrons are 10 kev photoelectrons resulting from the absorption of the x-ray photons, and (b)these electrons, on the average, loose from one fifth to all of their energy within a distance of 100 nm.
27. This calculation is based on the following simplifying assumptions: (a) the initial electrons are 600 kev Compton electrons resulting from the interaction of the Co-60 gamma rays with the material, and (b) the energy deposition of these electrons is determined using literature values for the stopping power of electrons.
28. J. M. Benedetto and H. E. Boesch, Jr., “The Relationship Between 60 Co and 10-kev X-Ray Damage in MOS Devices,” IEEE Trans. Nuc. Sci., NS-33, 1318–1323 (1986), Fig. 4.
29. C. M. Dozier, D. M. Fleetwood, D. B. Brown, and P. S. Winokur, “Sandia/NRL Interlaboratory Comparison of Low-Energy Energy X-Ray and Cobalt-60 Irradiations of MOS Transistors,” presented at the 1987 IEEE Nuclear and Space Radiation Effects Conference, Snowmass, CO, July 27-31, 1987.