Hardness-Assurance Issues for Lateral PNP Bipolar Junction Transistors

IEEE Transactions on Nuclear Science

Volumn 42, Issue 6, 1995, Pages 1641-1649

  Schrimpf, R D ^a   Graves, R J ^a   Schmidt, D M ^a   Fleetwood, D M ^b   Pease, R L ^c   Combs, W E ^d   DeLaus, M ^e  

^a UNIVERSITY OF ARIZONA   (United States)

^b SANDIA NATIONAL LABORATORIES   (United States)

^c RLP Research   (United States)

^d NAVAL SURFACE WARFARE CENTER   (United States)

^e ANALOG DEVICES INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; DEGRADATION; DOSIMETRY; RADIATION HARDENING; SEMICONDUCTOR JUNCTIONS; THERMAL EFFECTS;

BIPOLAR JUNCTION TRANSISTORS; DOSE RATE DEPENDENCE; GAIN DEGRADATION;

BIPOLAR TRANSISTORS;

EID: 0029546529     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/23.488761     Document Type: Article

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