Effect of post-oxidation anneal temperature on radiation-induced charge trapping in metal-oxide-semiconductor devices

Applied Physics Letters

Volumn 53, Issue 9, 1988, Pages 770-772

  Schwank, J R ^a   Fleetwood, D M ^a  

^a SANDIA NATIONAL LABORATORIES   (United States)

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EID: 0000686414     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.99828     Document Type: Article

References (14)