Correlating the Radiation Response of Mos Capacitors and Transistors

IEEE Transactions on Nuclear Science

Volumn 31, Issue 6, 1984, Pages 1453-1460

  Winokur, P S ^a   Schwank, J R ^a   McWhorter, P J ^a   Turpin, D C ^a   Dressendorfer, P V ^a  

^a SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTOR DEVICES, MOS - RADIATION EFFECTS; TRANSISTORS - RADIATION EFFECTS;

INTERFACE STATES; RADIATION RESPONSE; THRESHOLD-VOLTAGE SHIFT; TRAPPED-OXIDE CHARGE;

CAPACITORS;

EID: 0021605304     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/TNS.1984.4333529     Document Type: Article

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