-
25
-
-
0026396455
-
-
Figures 1, 9–11, and 12(a) and 12(c) have originally appeared in Ref. 20. Figure 2 of the text is a corrected version of the system diagram shown in Ref. 20. The energy scales in Ref. 20 are in error, as discussed in Ref. 59.
-
(1991)
IEEE Trans. Nucl. Sci.
, vol.38
, pp. 1066
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-
Fleetwood, D.M.1
Reber, R.A.2
Winokur, P.S.3
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61
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-
84954081792
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-
Model 6–6-6-BX, Thermcraft Incorporated, Winston-Salem, NC
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-
-
-
62
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-
84954082277
-
-
Model RS-211, Wahl Instruments, Culver City, CA
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-
-
-
63
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-
84954082557
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-
Model LIC 2748–24, Loranger International, Warren, PA. Although the (C72900) Spinodal plating on these sockets is not rated to 350 °C by Loranger, we have ramped them from 20°C to 350°C more than 500 times to date with no measurable degradation
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-
-
-
64
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-
84954081785
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No. 1102 (40 Ω) Cable, Coaxco, Tualatin, OR. The inner shield of the triaxial cables is grounded at both the HP4140B and the bulkhead. The outer shield is grounded at the HP4140B but isolated at the bulkhead, thus providing shielding without allowing current flow through the outer shield
-
-
-
-
65
-
-
84954082485
-
-
The HP4140B picoammeter settings are: function (I), current range (auto), filter (on, which adds an additional 60 ms to each 600 ms of response time on the [formula omitted] scale to reject 60 Hz noise), integration time (long, corresponding to ∼ 1066.7 ms on the [formula omitted] A scale, and 2133.3 ms on the [formula omitted] A scale—raw current measurements are taken by the HP4140B at 8.3 ms intervals), and current limit ([formula omitted] A, which of course is never exceeded for a working capacitor). Scale attributes are quoted from the HP4140B pA Meter/dc Voltage Source manual, No. 04140–90021, Yokogawa-Hewlett-Packard, Ltd.
-
(1980)
-
-
-
66
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-
84954081306
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-
The high leakage current shown in Fig. 5 for ceramic DIPs also suggests that care must be taken in the selection of packages for high-temperature applications of microelectronic circuits, even if junction leakages in the electronics are minimized via the use of silicon-on-insulator material, for example (Refs. 55 and 56)
-
-
-
-
69
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-
84954081173
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-
TSC measurements at positive bias can be quite sensitive to charge trapped near the gate/[formula omitted] interface, as may be important following negative-bias irradiation. This is discussed in detail in Ref. 20, in which it is shown that TSC measurements under varying bias conditions can provide information on the location of trapped positive charge in the oxide. However, because charge trapped near the gate/[formula omitted] interface has much less effect on MOS electrical response than charge trapped near the Si/[formula omitted] interface, TSC measurements at negative bias following positive-bias irradiation provide the best measure of a MOS structure’s basic radiation response
-
-
-
-
70
-
-
84954082471
-
-
Potential difficulties in interpreting TSC measurements for devices with large trapped-hole densities have been discussed in the context of space-charge limiting effects in Refs. 13 and 20. Here we emphasize that capacitance changes can also reduce the measured TSC, which extends and reinforces the discussions in Refs. 13 and 20, which do not address capacitance-change effects
-
-
-
-
74
-
-
84954082315
-
-
As shown in Fig. 12(a) below, the 6.5 nC of trapped-hole charge in these oxides is partially offset by 2.9 nC of trapped-electron charge in these measurements, thus rendering conventional C-V estimates (Sec. III) of trapped-hole density invalid
-
-
-
-
75
-
-
84954082087
-
-
One should not take the actual capacitance values in Fig. 11 seriously when considering quantitative changes in TSC current due to capacitance changes. Figure 11 shows the high-frequency capacitance of the MOS structure. The more relevant parameter is the quasi-static (low-frequency) capacitance (Ref. 63). The quasi-static capacitance differs significantly from the high-frequency capacitance, especially in inversion, due to the finite minority-carrier lifetime in Si (Ref. 63). This point does not affect the essence of the discussion of Fig. 11 which is that avoiding this region of the C-V curve will minimize errors in TSC measurements, but is important to remember if one actually wishes to calculate the magnitude of Ic in Eq. (11).
-
-
-
-
78
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-
84954081674
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-
For capacitors having Si substrates with long minority-carrier lifetimes, this increase in current may even mimic TSC due to radiation-induced charge or to bias-temperature instabilities. If special precautions are not taken, this can be a particular concern for TSC measurements made at a very high ramp rate.
-
-
-
-
80
-
-
84954082151
-
-
MIL-STD 883D, Test Method 1019.4, issued by the Defense Electronics Support Center, Dayton, OH, January 1992.
-
-
-
-
82
-
-
0022883487
-
-
(1986)
IEEE Trans. Nucl. Sci.
, vol.33
, pp. 1330
-
-
Fleetwood, D.M.1
Beegle, R.W.2
Sexton, F.W.3
Winokur, P.S.4
Miller, S.L.5
Treece, R.K.6
Schwank, J.R.7
Jones, R.V.8
McWhorter, P.J.9
-
100
-
-
0024169252
-
-
(1988)
IEEE Trans. Nucl. Sci.
, vol.35
, pp. 1265
-
-
Fleetwood, D.M.1
Beutler, D.E.2
Lorence, L.J.3
Brown, D.B.4
Draper, B.L.5
Riewe, L.C.6
Rosenstock, H.B.7
Knott, D.P.8
-
103
-
-
84954082082
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-
Model 4100 Semiconductor X-ray Irradiator, ARACOR, Sunnyvale, CA
-
-
-
-
104
-
-
84954082612
-
-
AECL Gammacell 220, Nordion International, Kanata, Ontario, Canada
-
-
-
-
105
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-
84954080957
-
-
Concern has been expressed in a previous study (Ref. 20) that TSC measurements may cause problems for (highly penetrating) Co-60 irradiations of mounted capacitors because of radiation-induced charging of the platform. We have duplicated the conditions of the Co-60 irradiations of Fig. 13 for bare platforms and find that, at the very most, ∼0.15 nC of the total charge collected during TSC measurements of MOS capacitors irradiated to 4.0 krad ([formula omitted]) may be attributable to radiation-induced platform charging. Moreover, irradiations of platforms in a Co-60 source to 1.0 Mrad ([formula omitted]) led to at most ∼0.3 nC of charge. Thus, as long as the radiation-induced oxide-trap charge is well above these levels, as is the case here, there is not a significant problem in measuring the TSC of Co-60 irradiated capacitors. This problem is avoided entirely during x-ray irradiations simply by shielding the low-energy x rays from the bare surfaces of the platform (Ref. 20)
-
-
-
-
106
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-
84954081057
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-
In general, Co-60 and ∼10 keV x-ray irradiations can lead to significantly different oxide-and interface-trap charge densities because of dose enhancement and electron-hole recombination effects (Ref. 85, for example). The remarkable similarity between the x ray and Co-60 response in Fig. 13 suggests a near cancellation of these effects for these structures and irradiation conditions. The key point in Fig. 13 is that the difference in radiation energy did not lead to significant differences in the energy distributions of the trapped holes, thus allowing simpler comparison between radiation results for the two types of sources
-
-
-
-
116
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-
0025595078
-
-
and references therein. TSC measurements may be only of limited use to detector materials with high leakage currents, or those that delaminate, at high temperatures. Nevertheless, it is possible that the TSC method may be applicable over a limited temperature range for some types of these devices
-
(1990)
IEEE Trans. Nucl. Sci.
, vol.37
, pp. 2034
-
-
Moriwaki, M.M.1
Srour, J.R.2
Lou, L.F.3
Waterman, J.R.4
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