Effects of oxide traps, interface traps, and "border traps" on metal-oxide-semiconductor devices

Journal of Applied Physics

Volumn 73, Issue 10, 1993, Pages 5058-5074

  Fleetwood, D M ^a   Winokur, P S ^a   Reber Jr , R A ^a   Meisenheimer, T L ^a   Schwank, J R ^a   Shaneyfelt, M R ^a   Riewe, L C ^a  

^a SANDIA NATIONAL LABORATORIES   (United States)

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Indexed keywords

EID: 21544480403     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.353777     Document Type: Article

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