Comparison of Ionizing-Radiation-Induced Gain Degradation in Lateral, Substrate, and Vertical PNP BJTs

IEEE Transactions on Nuclear Science

Volumn 42, Issue 6, 1995, Pages 1541-1549

  Schmidt, D M ^a   Fleetwood, D M ^b   Schrimpf, R D ^a   Pease, R L ^c   Graves, R J ^a   Johnson, G H ^a   Galloway, K F ^a   Combs, W E ^d  

^a UNIVERSITY OF ARIZONA   (United States)

^b SANDIA NATIONAL LABORATORIES   (United States)

^c RLP Research Inc   (United States)

^d NAVAL SURFACE WARFARE CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

FAILURE (MECHANICAL); INTEGRATED CIRCUIT TESTING; RADIATION EFFECTS; SUBSTRATES;

BIPOLAR JUNCTION TRANSISTORS; GAIN DEGRADATION;

BIPOLAR TRANSISTORS;

EID: 0029518477     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/23.488748     Document Type: Article

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