Electron and Hole Trapping in Doped Oxides

IEEE Transactions on Nuclear Science

Volumn 42, Issue 6, 1995, Pages 1731-1739

  Warren, W L ^a   Shaneyfelt, M R ^b   Fleetwood, D M ^b   Winokur, P S ^b   Montague, S ^b  

^a SANDIA NATIONAL LABORATORIES   (United States)

^b NONE

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CHARGE; ELECTRONS; OXIDES; PARAMAGNETIC RESONANCE; RADIATION EFFECTS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING; THIN FILMS; ULTRAVIOLET RADIATION;

CAPACITANCE VOLTAGE STUDIES; DOPED OXIDES; ELECTRON TRAPPING; HOLE TRAPPING; THERMALLY GROWN OXIDES; THERMALLY SIMULATED CURRENT;

SEMICONDUCTING FILMS;

EID: 0029517917     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/23.488772     Document Type: Article

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