Physical mechanisms contributing to enhanced bipolar gain degradation at low dose rates

IEEE Transactions on Nuclear Science

Volumn 41, Issue 6, 1994, Pages 1871-1883

  Fleetwood, D M ^a   Reber, R A ^a   Winokur, P S ^a   Kosier, S L ^b   Schrimpf, R D ^b   Wei, A ^b   Nowlin, R N ^c   DeLaus, M ^d   Combs, W E ^e   Pease, R L ^f  

^a SANDIA NATIONAL LABORATORIES   (United States)

^b UNIVERSITY OF ARIZONA   (United States)

^c Phillips Laboratories   (United States)

^d ANALOG DEVICES INC   (United States)

^e NAVAL SURFACE WARFARE CENTER   (United States)

^f RLP Research Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE MEASUREMENT; CAPACITORS; CARRIER CONCENTRATION; CHARGE CARRIERS; CRYSTAL DEFECTS; ELECTRIC CURRENT MEASUREMENT; ELECTRIC SPACE CHARGE; MOS DEVICES; OXIDES; RADIATION DAMAGE; SEMICONDUCTOR DEVICE MODELS; VOLTAGE MEASUREMENT;

CHARGE TRAPPING; RADIATION HARDNESS; THERMALLY STIMULATED CURRENT MEASUREMENT; TRAPPED HOLE DENSITY;

BIPOLAR INTEGRATED CIRCUITS;

EID: 0028714344     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/23.340519     Document Type: Article

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