Paramagnetic defect centers in BESOI and SIMOX buried oxides

IEEE Transactions on Nuclear Science

Volumn 40, Issue 6, 1993, Pages 1755-1764

  Warren, W L ^a   Shaneyfelt, M R ^a   Schwank, J R ^a   Fleetwood, D M ^a   Winokur, P S ^a   Devine, R A B ^b   Maszara, W P ^c   McKitterick, J B ^c  

^a SANDIA NATIONAL LABORATORIES   (United States)

^b France Télécom Centre National d'Etudes Télécommunications ^*  (France)

^c HONEYWELL   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE MEASUREMENT; DEFECTS; DIFFUSION IN SOLIDS; ELECTRON ENERGY LEVELS; HIGH TEMPERATURE EFFECTS; ION IMPLANTATION; MAGNETIC RESONANCE MEASUREMENT; OXIDES; PARAMAGNETIC RESONANCE; RADIATION DAMAGE; SILICON ON INSULATOR TECHNOLOGY; VOLTAGE MEASUREMENT;

AMORPHOUS SILICON CENTERS; CHARGE STATE; CHARGED OXYGEN VACANCIES; DELOCALIZED HOLE CENTERS; DELOCALIZED SPIN CENTERS; HOLE TRAPS; PARAMAGNETIC DEFECT CENTERS;

SOLID STATE DEVICE STRUCTURES;

EID: 0027851925     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/23.273482     Document Type: Article

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