The relationship between 60Co and 10-keV X-ray damage in MOS devices

IEEE Transactions on Nuclear Science

Volumn 33, Issue 6, 1986, Pages 1317-1323

  Benedetto, J M ^a   Boesch, H E ^a  

^a U S ARMY RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 67649723937     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/TNS.1986.4334599     Document Type: Article

References (16)

1. C. M. Dozier, D. B. Brown, J. L. Throckmorton, and D. I. Ma, “Defect Production in SiO2by X-ray and 60 Co Radiations,” IEEE Trans. Nucl. Sci. NS-32, No. 6, 4363–4368 (1985).
2. C. M. Dozier and D. B. Brown, “The Use of Low Energy X-Rays for Device Testing—A Comparison with 60 Co Radiation,” IEEE Trans. Nucl. Sci. NS-30, No. 6, 4382–4387 (1983).
3. C. M. Dozier and D. B. Brown, “The Effect of Photon Energy on the Response of MOS Devices,” IEEE Trans. Nucl. Sci. NS-28, No. 6, 4137–4141 (1981).
4. C. M. Dozier and D. B. Brown, “Photon Energy Dependence of Radiation Effects in MOS Structures,” IEEE Trans. Nucl. Sci. NS-27, No. 6, 1694–1699 (1980).
5. T. R. Oldham and J. M. McGarrity, “Comparison of 60 Co Response and 10 keV X-ray Response in MOS Capacitors,” IEEE Trans. Nucl. Sci. NS-30, No. 6, 4377–4381 (1983).
6. H. E. Boesch, Jr., “Hole Transport and Trapping in Field Oxides,” IEEE Trans. Nucl. Sci. NS-32, No. 6, 3940–3945 (1985).
7. D. B. Brown, “The Time Dependence of Interface State Production,” IEEE Trans. Nucl. Sci. NS-32, No. 6, 3900–3904 (1985).
8. D. L. Griscom, “Diffusion of Radiolytic Molecular Hydrogen as a Mechanism for the Post-Irradiation Buildup of Interface States in SiO2-on-Si Structures,” J. Appl. Phys. 58, 2524 (1985).
9. F. B. McLean, “Interface States in SiO2MOS Structures,” IEEE Trans. Nucl. Sci. NS-27, No. 6, 1651–1657 (1980).
10. D. B. Brown, “Photoelectron Effects on the Dose Deposited in MOS Devices by Low Energy X-ray Sources,” IEEE Trans. Nucl. Sci. NS-27, No. 6, 1465–1468 (1980).
11. G. A. Ausman, Jr., and F. B. McLean, “Electron-Hole Hole Pair Creation Energy in SiO 2,” Appl. Phys. Lett. 26 173–175 (1975).
12. D. B. Brown, “The Phenomenon of Electron Rollout for Energy Deposition in MOS Devices,” to be published, IEEE Trans. Nucl. Sci. (Dec. 1986).
13. D. B. Brown, private communication.
14. H. E. Boesch, Jr. and J. M. McGarrity, “Charge Yield and Dose Effects in MOS Capacitors at 80 K,” IEEE Trans. Nucl. Sci. NS-23, No. 6, 1520–1525 (1976).
15. F. Briggs and R. Lighthill, “Analytical Approximations for X-ray Cross Sections 11,” Sandia Laboratories Technical Report, SC-RR-71-0507 (1971).
16. K. G. Kerris and S. G. Gorbics, “Experimental Determination of the Low-Energy Spectral Component of Cobalt-60 Sources,” IEEE Trans. Nucl. Sci. NS-32, No. 6, 4356–4362 (1985).