Effects of Interface Traps and Border Traps on Mos Postirradiation Annealing Response

IEEE Transactions on Nuclear Science

Volumn 42, Issue 6, 1995, Pages 1698-1707

  Fleetwood, D M ^a   Warren, W L ^b   Schwank, J R ^b   Winokur, P S ^b   Shaneyfelt, M R ^b   Riewe, L C ^b  

^a SANDIA NATIONAL LABORATORIES   (United States)

^b NONE

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; INTERFACES (MATERIALS); RADIATION EFFECTS; THERMAL EFFECTS;

BORDER TRAPS; CHARGE PUMPING; INTERFACE TRAP; THRESHOLD VOLTAGE;

MOS DEVICES;

EID: 0029491546     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/23.488768     Document Type: Article

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