메뉴 건너뛰기




Volumn 42, Issue 6, 1995, Pages 1650-1659

Enhanced Damage in Linear Bipolar Integrated Circuits at Low Dose Rate

Author keywords

[No Author keywords available]

Indexed keywords

DEGRADATION; DOSIMETRY; LINEAR INTEGRATED CIRCUITS; RADIATION EFFECTS;

EID: 0029521843     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/23.488762     Document Type: Article
Times cited : (111)

References (17)
  • 1
    • 84939758992 scopus 로고
    • Trends in the Total-Dose Response of Modern Bipolar Transistors
    • R. N. Nowlin, E. N. Enlow, R. D. Schrimpf, and W. E. Combs, “Trends in the Total-Dose Response of Modern Bipolar Transistors,” IEEE Trans. Nucl. Sci., NS-39, 2026 (1992).
    • (1992) IEEE Trans. Nucl. Sci. , vol.NS-39 , pp. 2026
    • Nowlin, R.N.1    Enlow, E.N.2    Schrimpf, R.D.3    Combs, W.E.4
  • 2
    • 0028699527 scopus 로고
    • Total Dose Effects in Conventional Bipolar Transistors and Linear Integrated Circuits
    • A. H. Johnston, G. M. Swift, and B. G. Rax, “Total Dose Effects in Conventional Bipolar Transistors and Linear Integrated Circuits,” IEEE Trans. Nucl. Sci., NS-41, 2427 (1994).
    • (1994) IEEE Trans. Nucl. Sci. , vol.NS-41 , pp. 2427
    • Johnston, A.H.1    Swift, G.M.2    Rax, B.G.3
  • 3
    • 0028693849 scopus 로고
    • Dependence of Total Dose Response of Bipolar Linear Microcircuits on Applied Dose Rate
    • S. McClure, R. L. Pease, W. Will, and G. Perry, “Dependence of Total Dose Response of Bipolar Linear Microcircuits on Applied Dose Rate,” IEEE Trans. Nucl. Sci., NS-41, 2544 (1994).
    • (1994) IEEE Trans. Nucl. Sci. , vol.NS-41 , pp. 2544
    • McClure, S.1    Pease, R.L.2    Will, W.3    Perry, G.4
  • 8
    • 0017682491 scopus 로고
    • The Application of Operational Amplifiers to Hardened Systems
    • A. H. Johnston, “The Application of Operational Amplifiers to Hardened Systems,” IEEE Trans. Nucl. Sci., NS-24, 2071 (1977).
    • (1977) IEEE Trans. Nucl. Sci. , vol.NS-24 , pp. 2071
    • Johnston, A.H.1
  • 9
    • 34648857427 scopus 로고    scopus 로고
    • Hardness Assurance Issues for Lateral pnp Bipolar Junction Transistors
    • IEEE Trans. Nucl. Sci. this issue
    • R. D. Schrimpf, R. J. Graves, D. M. Schmidt, D. M. Fleetwood, R. L. Pease, W. Combs, and M. DeLaus, “Hardness Assurance Issues for Lateral pnp Bipolar Junction Transistors, “IEEE Trans. Nucl. Sci., this issue.
    • Schrimpf, R.D.1    Graves, R.J.2    Schmidt, D.M.3    Fleetwood, D.M.4    Pease, R.L.5    Combs, W.6    DeLaus, M.7
  • 11
    • 84966555210 scopus 로고
    • An Investigation of Lateral Transistors - D.C. Characteristics
    • S. Chou, “An Investigation of Lateral Transistors - D.C. Characteristics,” Solid State Electronics, 14, 811 (1971).
    • (1971) Solid State Electronics , vol.14 , pp. 811
    • Chou, S.1
  • 14
    • 0028727863 scopus 로고
    • Saturation of the Dose-Rate Response of Bipolar Transistors Below 10 rad(Si)/s: Implications for Hardness Assurance
    • R. N. Nowlin, D. M. Fleetwood, and R. D. Schrimpf, “Saturation of the Dose-Rate Response of Bipolar Transistors Below 10 rad(Si)/s: Implications for Hardness Assurance,” IEEE Trans. Nucl. Sci., NS-41, 2637 (1994).
    • (1994) IEEE Trans. Nucl. Sci. , vol.NS-41 , pp. 2637
    • Nowlin, R.N.1    Fleetwood, D.M.2    Schrimpf, R.D.3
  • 15
    • 0017242346 scopus 로고
    • Hole Transport and Recovery Characteristics of SiO2 Gate Insulators
    • F. B. McLean, H. E. Boesch, Jr., and J. M. McGarrity, “Hole Transport and Recovery Characteristics of SiO2 Gate Insulators,” IEEE Trans. Nucl. Sci., NS-23, No. 6, 1506 (1976).
    • (1976) IEEE Trans. Nucl. Sci. , vol.NS-23 , Issue.6 , pp. 1506
    • McLean, F.B.1    Boesch, H.E.2    McGarrity, J.M.3
  • 16
    • 0022205830 scopus 로고
    • Hole Transport and Trapping in Field Oxides
    • H. E. Boesch, Jr., and F. B. McLean, “Hole Transport and Trapping in Field Oxides,” IEEE Trans. Nucl., Sci., NS-32, 3940 (1985).
    • (1985) IEEE Trans. Nucl., Sci. , vol.NS-32 , pp. 3940
    • Boesch, H.E.1    McLean, F.B.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.