SCOPUS 정보 검색 플랫폼

Volumn 3, Issue 3, 2011, Pages 1120-1126

Deep-ultraviolet solar-blind photoconductivity of individual gallium oxide nanobelts

(10) Li, Liang a Auer, Erwin b Liao, Meiyong a Fang, Xiaosheng a Zhai, Tianyou a Gautam, Ujjal K a Lugstein, Alois b Koide, Yasuo a Bando, Yoshio a Golberg, Dmitri a

a NATIONAL INSTITUTE FOR MATERIALS SCIENCE (Japan)

b VIENNA UNIVERSITY OF TECHNOLOGY (Austria)

Author keywords

[No Author keywords available]

Indexed keywords

BAND GAPS; BANDBENDING; DARK CURRENT RATIO; FAST RESPONSE; FUTURE APPLICATIONS; GALLIUM OXIDES; HIGH SELECTIVITY; INTENSITY OF LIGHT; ORDERS OF MAGNITUDE; PHOTORESPONSES; RESPONSE TIME; SEMICONDUCTOR PHOTODETECTORS; SOLAR-BLIND; SURFACE TRAP;

LIGHT EMITTING DIODES; OPTICAL SWITCHES; OPTOELECTRONIC DEVICES; PHOTOCONDUCTIVITY; PHOTODETECTORS;

NANOBELTS;

GALLIUM; GALLIUM OXIDE; NANOMATERIAL;

ARTICLE; CHEMISTRY; CONDUCTOMETRY; EQUIPMENT; EQUIPMENT DESIGN; INSTRUMENTATION; LIGHT; PHOTOMETRY; RADIATION EXPOSURE; SOLAR ENERGY; ULTRAVIOLET RADIATION;

CONDUCTOMETRY; EQUIPMENT DESIGN; EQUIPMENT FAILURE ANALYSIS; GALLIUM; LIGHT; NANOSTRUCTURES; PHOTOMETRY; SOLAR ENERGY; ULTRAVIOLET RAYS;

EID: 79952677692 PISSN: 20403364 EISSN: 20403372 Source Type: Journal
DOI: 10.1039/c0nr00702a Document Type: Article

Times cited : (232)

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