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Volumn 36, Issue 4-6, 2004, Pages 849-857

Properties of Schottky barrier photodiodes based on InGaN/GaN MQW structures

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ELECTRIC FIELDS; ELECTRIC POTENTIAL; GALLIUM NITRIDE; PHOTODETECTORS; PHOTONS; SCHOTTKY BARRIER DIODES; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; ULTRAVIOLET RADIATION;

EID: 9944255659     PISSN: 07496036     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.spmi.2004.09.040     Document Type: Article
Times cited : (33)

References (11)
  • 4
    • 9944263870 scopus 로고    scopus 로고
    • Nitride photodetectors in UV biological effects studies
    • M.S. Shur, A. Zukauskas (Eds.), UV Solid-State Light Emitters and Detectors
    • E. Muñoz, J.L. Pau, C. Rivera, Nitride photodetectors in UV biological effects studies, in: Proceedings of the NATO Advanced Research Workshop, in: M.S. Shur, A. Zukauskas (Eds.), UV Solid-State Light Emitters and Detectors, vol. 144, 2003.
    • (2003) Proceedings of the NATO Advanced Research Workshop , vol.144
    • Muñoz, E.1    Pau, J.L.2    Rivera, C.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.