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Japanese Journal of Applied Physics, Part 2: Letters

Volumn 43, Issue 5 B, 2004, Pages

Visible-blind metal-semiconductor-metal photodetectors based on undoped AlGaN/GaN high electron mobility transistor structure

(5) Jiang, Hao a Egawa, Takashi a Ishikawa, Hiroyasu a Shao, Chunlin a Jimbo, Takashi a

a NAGOYA INSTITUTE OF TECHNOLOGY (Japan)

Author keywords

AlGaN GaN; HEMT; Heterostructure; Photodetector

Indexed keywords

ALUMINUM NITRIDE; DOPING (ADDITIVES); ELECTRON MOBILITY; MONOLITHIC INTEGRATED CIRCUITS; PHOTODETECTORS; POLARIZATION; SEMICONDUCTOR MATERIALS; TRANSISTORS;

ALGAN/GAN; HIGH ELECTRON MOBILITY TRANSISTORS (HEMT); PEAK RESPONSIVITY;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 3142730075 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.43.l683 Document Type: Article

Times cited : (23)

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