SCOPUS 정보 검색 플랫폼

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 43, Issue 1 A/B, 2004, Pages

Operation at 700°C of 6H-SiC UV Sensor Fabricated Using N+ Implantation

(6) Toda, Tadao a Hata, Masayuki a Nomura, Yasuhiko a Ueda, Yasuhiro a Sawada, Minoru a Shono, Masayuki a

Author keywords

Absorption coefficient; Combustion control; Flame detector; High temperature; Minority carrier diffusion length; Photocurrent; SiC; UV sensor

Indexed keywords

ABSORPTION; COMBUSTION; DIFFUSION; ELECTRIC CONDUCTIVITY; HIGH TEMPERATURE EFFECTS; ION IMPLANTATION; NITROGEN; PHOTOCURRENTS; SENSORS; ULTRAVIOLET DEVICES;

ABSORPTION COEFFICIENTS; COMBUSTION CONTROL; FLAME DETECTORS; MINORITY CARRIER DIFFUSION LENGTH; UV SENSORS;

SILICON CARBIDE;

EID: 1842759707 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/JJAP.43.L27 Document Type: Article

Times cited : (33)

References (12)

1
- 0032064262
- D. M. Brown, E. Downey, J. Kretchmer, G. Michon, E. Shu and D. Schneider: Solid State Electron. 42 (1998) 755.
- (1998) Solid State Electron , vol.42 , pp. 755
- Brown, D.M.¹ Downey, E.² Kretchmer, J.³ Michon, G.⁴ Shu, E.⁵ Schneider, D.⁶

2
- 0347819314
- P. Glasow, G. Ziegler, W. Suttrop, G. Pensl and R. Heibig: Proc. SPIE 868 (1987) 40.
- (1987) Proc. SPIE , vol.868 , pp. 40
- Glasow, P.¹ Ziegler, G.² Suttrop, W.³ Pensl, G.⁴ Heibig, R.⁵

3
- 0031186333
- J. Edmond, H. Kong, A. Suvorov, D. Waltz and C. Cater, Jr.: Phys. Status Solidi A 162 (1997) 481.
- (1997) Phys. Status Solidi A , vol.162 , pp. 481
- Edmond, J.¹ Kong, H.² Suvorov, A.³ Waltz, D.⁴ Cater C., Jr.⁵

4
- 0001695017
- R. B. Campbell and H. C. Chang: Solid-State Electron. 10 (1967) 949.
- (1967) Solid-state Electron. , vol.10 , pp. 949
- Campbell, R.B.¹ Chang, H.C.²

5
- 0027543254
- D. M. Brown, E. Downey, M. Ghezzo, J. Krechmer, R. Saia, Y. Liu, J. Edmond, G. Gati, J. Pimbly and W. Schneider: IEEE Trans. Electron Devices 40 (1993) 325.
- (1993) IEEE Trans. Electron Devices , vol.40 , pp. 325
- Brown, D.M.¹ Downey, E.² Ghezzo, M.³ Krechmer, J.⁴ Saia, R.⁵ Liu, Y.⁶ Edmond, J.⁷ Gati, G.⁸ Pimbly, J.⁹ Schneider, W.¹⁰

6
- 1842776905
- T. Toda, Y. Ueda and M. Sawada: Mater. Sci. Forum 338-342 (2000) 989.
- (2000) Mater. Sci. Forum , vol.989 , pp. 338-342
- Toda, T.¹ Ueda, Y.² Sawada, M.³

7
- 0028427759
- P. G. Neudeck, D. J. Larkin, J. E. Starr, J. A. Powell, C. S. Salupo and L. G. Matus: IEEE Trans. Electron Devices 41 (1994) 826.
- (1994) IEEE Trans. Electron Devices , vol.41 , pp. 826
- Neudeck, P.G.¹ Larkin, D.J.² Starr, J.E.³ Powell, J.A.⁴ Salupo, C.S.⁵ Matus, L.G.⁶

8
- 0004005306
- John Wiley & Sons, Inc., New York, 2nd ed.
- S. M. Sze: Physics of Semiconductor Devices (John Wiley & Sons, Inc., New York, 1981) 2nd ed., p. 90.
- (1981) Physics of Semiconductor Devices , pp. 90
- Sze, S.M.¹

9
- 0003443049
- Dover Pub. Inc., New York
- J. I. Pankove: Optical Processes in Semiconductors (Dover Pub. Inc., New York, 1975) p. 38.
- (1975) Optical Processes in Semiconductors York , pp. 38
- Pankove, J.I.¹

10
- 0031190138
- S. Nakashima and H. Harima: Phys. Status Solidi A 162 (1997) 39.
- (1997) Phys. Status Solidi A , vol.162 , pp. 39
- Nakashima, S.¹ Harima, H.²

11
- 0003597031
- Photoluminescence Spectra of SiC Polytypes, Properties of Silicon Carbide
- ed. G. L. Harris (The IEE, Hemdon VA)
- J. A. Freitas, Jr.: Photoluminescence Spectra of SiC Polytypes, Properties of Silicon Carbide, ed. G. L. Harris (The IEE, Hemdon VA, 1995) EMIS Data Reviews Series No. 13, p. 29.
- (1995) EMIS Data Reviews Series No. 13 , vol.13 , pp. 29
- Freitas Jr., J.A.¹

12
- 0004005306
- John Wiley & Sons, Inc., New York
- S. M. Sze: Physics of Semiconductor Devices (John Wiley & Sons, Inc., New York, 1969) p. 87.
- (1969) Physics of Semiconductor Devices , pp. 87
- Sze, S.M.¹

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.