Photovoltaic Schottky ultraviolet detectors fabricated on boron-doped homoepitaxial diamond layer

Applied Physics Letters

Volumn 88, Issue 3, 2006, Pages 1-3

  Liao, Meiyong ^a   Koide, Yasuo ^a   Alvarez, Jose ^a  

^a NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BORON; DIAMONDS; DOPING (ADDITIVES); NUMERICAL ANALYSIS; PHOTOCURRENTS; PHOTOVOLTAIC CELLS; TUNGSTEN CARBIDE;

BORON-DOPED HOMOEPITAXIAL DIAMOND LAYER; DEEP ULTRAVIOLET (DUV) LIGHT DETECTION; DUV LIGHT INTENSITY; PHOTOVOLTAIC SCHOTTKY ULTRAVIOLET DETECTORS;

ULTRAVIOLET DETECTORS;

EID: 31144440949     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2166490     Document Type: Article

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