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Electronics Letters

Volumn 38, Issue 15, 2002, Pages 824-826

Improved solar-blind external quantum efficiency of back-illuminated AlxGa1-xN heterojunction pin photodiodes

(7) Collins, C J a Chowdhury, U a Wong, M M a Yang, B a Beck, A L a Dupuis, R D a Campbell, J C a

a The University of Texas at Austin (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; ELECTRIC RESISTANCE; ENERGY GAP; HETEROJUNCTIONS; LIGHT ABSORPTION; LIGHT SCATTERING; LIGHT TRANSMISSION; QUANTUM EFFICIENCY; SAPPHIRE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SOLAR RADIATION;

ALUMINUM GALLIUM NITRIDE; DARK CURRENT DENSITY; DIFFERENTIAL RESISTANCE; SOLAR-BLIND EXTERNAL QUANTUM EFFICIENCY; ULTRAVIOLET PHOTON DETECTION; WIDE-BANDGAP SEMICONDUCTOR DEVICE;

PHOTODIODES;

EID: 0037130427 PISSN: 00135194 EISSN: None Source Type: Journal
DOI: 10.1049/el:20020526 Document Type: Article

Times cited : (29)

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