In0.11Ga0.89N-based p-i-n photodetector

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 6, Issue SUPPL. 2, 2009, Pages

  Su, Y K ^a   Lee, H C ^a   Lin, J C ^b   Huang, K C ^c   Lin, W J ^b   Li, T C ^b   Chang, K J ^b  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b CHUNG SHAN INSTITUTE OF SCIENCE AND TECHNOLOGY   (Taiwan)

^c NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE LAYER; AT-WAVELENGTH; CURRENT DENSITY-VOLTAGE CHARACTERISTICS; CUT-OFF; EXTERNAL QUANTUM EFFICIENCY; FILL FACTOR; MOCVD; P-I-N PHOTODETECTORS; PHOTOLUMINESCENCE MEASUREMENTS; PHOTORESPONSES; PHOTOVOLTAIC CHARACTERISTICS; REJECTION RATIOS; RESPONSIVITY MEASUREMENTS; SPECTRAL RESPONSIVITY; STRONG LUMINESCENCE;

GALLIUM NITRIDE; PHOTODETECTORS; SEMICONDUCTOR QUANTUM WELLS; X RAY DIFFRACTION;

OPTOELECTRONIC DEVICES;

EID: 78650123220     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.200880757     Document Type: Article

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