High responsivity 4H-SiC based metal-semiconductor-metal ultraviolet photodetectors

Science in China, Series G: Physics, Mechanics and Astronomy

Volumn 51, Issue 11, 2008, Pages 1616-1620

  Yang, WeiFeng ^a   Zhang, Feng ^a   Liu, ZhuGuang ^a   Lü, Ying ^a   Wu, ZhengYun ^a  

^a XIAMEN UNIVERSITY   (China)

Author keywords

4H SiC; MSM; Responsivity; UV photodetector

Indexed keywords

ELECTRIC CONDUCTIVITY; FABRICATION; MARKOV PROCESSES; METALS; OPTOELECTRONIC DEVICES; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR MATERIALS; SILICON CARBIDE;

4H-SIC; FABRICATED DEVICES; HIGH RESPONSIVITY; MSM; PEAK RESPONSES; REJECTION RATIOS; RESPONSIVITY; ROOM TEMPERATURES; SCHOTTKY CONTACTS; SPECTRAL RESPONSIVITY; ULTRAVIOLET PHOTODETECTORS; UV PHOTODETECTOR;

PHOTODETECTORS;

EID: 54049132080     PISSN: 16721799     EISSN: 18622844     Source Type: Journal    
DOI: 10.1007/s11433-008-0167-6     Document Type: Article

References (18)

1. H. Morkoc S. Strite G. B. Gao 1994 Large-band-gap SiC, III-V nitride, and II-VI ZnSe-based semiconductor device technologies J Appl Phys 76 1363 1398
2. E. Monroy F. Omnes F. Calle 2003 Wide-bandgap semiconductor ultraviolet photodetectors Semicond Sci Technol 18 33 51
3. R. B. Campbell H. C. Chang 1967 Detection of ultraviolet radiation using silicon carbide p-n junctions Solid State Electron 10 949 953
4. M. M. Anikin A. N. Andreev S. N. Pyatko 1992 UV photodetectors in 6H-SiC Sens Actuat A 33 91 93
5. J. A. Edmond H. S. Kong C. H. Carter 1993 Blue LED's, UV photodiodes and high-temperature rectifiers in 6H-SiC Phys B 185 453 460
6. D. M. Brown E. T. Downey M. Ghezzo 1993 Silicon carbide UV photodiodes IEEE Trans Electron Dev 40 325 333
7. Y. Hirabayashi S. Karasawa K. Kobayashi 1994 Spectral response of a photodiode using 3C-SiC single crystalline film Sens Actuat A 43 164 169
8. Y. Hirabashi S. Misawa S. Yoshida 1996 The effect of atmospheric and HIP annealing on spectral response of 3C-SiC pn photodiode Inst Phys Conf Ser 142 709 712
9. V. Hurm V. Bronner W. Benz 2002 Large area MSM photodiode array for 0.85 μm wavelength 10 Gbit/s per channel parallel optical links Electron Lett 38 1051 1052
10. K. C. Kim Y. M. Sung I. H. Lee 2006 Visible-blind ultraviolet imagers consisting of 8×8 AlGaN p-i-n photodiode arrays J Vacuum Sci Technol A: Vacuum Surf Films 24 641 644
11. Y. K. Su Y. Z. Chiou C. S. Chang 2002 4H-SiC metal-semiconductor-metal ultraviolet photodetectors with Ni/ITO electrodes Solid State Electron 46 2237 2240
12. A. Sciuto F. Roccaforte S. D. Franco 2007 High efficiency 4H-SiC Schottky UV photodiodes using self-aligned semitransparent contacts Superlatt Microstruct 41 29 35
13. Y. G. Zhang A. Z. Li A. G. Milnes 1997 Metal-semiconductor-metal ultraviolet photodetectors using 6H-SiC IEEE Photon Technol Lett 9 363 364
14. W. F. Yang K. Q. Yang X. P. Chen 2005 Study of annealing effect on Cu/, Ni/4H-SiC Schottky barrier Chin J Semicond 26 277 280
15. S. Mariusz J. Szmidt A. Werbowy 2002 Influence of annealing on reverse current of 4H-SiC Schottky diodes Diamond Relat Mater 11 1263 1267
16. M. W. Cole P. C. Joshi C. W. Hubbard 2000 Improved Ni based composite Ohmic contact to n-SiC for high temperature and high power device applications J Appl Phys 88 2652 2657
17. T. Marinova A. Kakanakova-Georgieva V. Krastev 1997 Nickel based ohmic contacts on SiC Mater Sci Eng B 46 223 226
18. Y. Cao L. Nybory U. Jelvestam 2005 Effect of pre-treatment and nickel layer thickness on nickel silicide/silicon carbide contact Appl Surf Sci 241 392 402