High quantum efficiency metal-semiconductor-metal ultraviolet photodetectors fabricated on single-crystal GaN epitaxial layers

Electronics Letters

Volumn 33, Issue 23, 1997, Pages 1980-1981

  Carrano, J C ^a   Li, T ^a   Grudowski, P A ^a   Eiting, C J ^a   Dupuis, R D ^a   Campbell, J C ^a  

^a The University of Texas at Austin   (United States)

Author keywords

Gallium nitride; Photodetectors

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CURRENT MEASUREMENT; ENERGY GAP; PHOTONS; QUANTUM EFFICIENCY; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR METAL BOUNDARIES; SINGLE CRYSTALS; SPECTRUM ANALYSIS;

DARK CURRENT; GALLIUM NITRIDE;

ULTRAVIOLET DETECTORS;

EID: 0031556695     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19971322     Document Type: Article

References (7)

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6. CARRANO, J.C., GRUDOWSKI, P.A., EITING, C.J., DUPLIS, R.D., and CAMPBELL, J.C.: 'Very low dark current metal-semiconductor-metal ultraviolet photodetectors fabricated on single-crystal GaN epitaxial layers', Appl. Phys. Lett., 1997, 70, pp. 1992-1994
7. CARRANO, J.C., LI, T., GRUDOWSKI, P.A., EITING, C.J., DUPUIS, R.D., and CAMPBELL, J.C.: 'Current transport mechanisms in GaN-based metal-semiconductor-metal photodetectors'. submitted to Appl. Phys. Lett.